Study of narrow negative magnetoresistance effect in ultra-high mobility GaAs/AlGaAs 2DES under microwave photo-excitation

The microwave-induced change in the narrow negative magnetoresistance effect that appears around zero magnetic field in high mobility GaAs/AlGaAs 2DES (≈10(7) cm(2)/Vs) is experimentally examined as a function of incident microwave power at a fixed bath temperature. The experimental results indicate...

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Detalles Bibliográficos
Autores principales: Samaraweera, R. L., Gunawardana, B., Nanayakkara, T. R., Munasinghe, R. C., Kriisa, A., Reichl, C., Wegscheider, W., Mani, R. G.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6972946/
https://www.ncbi.nlm.nih.gov/pubmed/31964912
http://dx.doi.org/10.1038/s41598-019-57331-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6972946/
https://www.ncbi.nlm.nih.gov/pubmed/31964912
http://dx.doi.org/10.1038/s41598-019-57331-9

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