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Study of narrow negative magnetoresistance effect in ultra-high mobility GaAs/AlGaAs 2DES under microwave photo-excitation
The microwave-induced change in the narrow negative magnetoresistance effect that appears around zero magnetic field in high mobility GaAs/AlGaAs 2DES (≈10(7) cm(2)/Vs) is experimentally examined as a function of incident microwave power at a fixed bath temperature. The experimental results indicate...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6972946/ https://www.ncbi.nlm.nih.gov/pubmed/31964912 http://dx.doi.org/10.1038/s41598-019-57331-9 |