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Transient Electronic Depletion and Lattice Expansion Induced Ultrafast Bandedge Plasmons
Strong optical excitation of plasmonic nanostructures may induce simultaneous interband and intraband electronic transitions. However, interaction mechanisms between interband, intraband, and plasmon‐band processes have not been thoroughly understood. In particular, optical‐heating‐induced lattice e...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
John Wiley and Sons Inc.
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6974950/ https://www.ncbi.nlm.nih.gov/pubmed/31993295 http://dx.doi.org/10.1002/advs.201902408 |
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author | Zhang, Xinping Wang, Meng Tang, Fawei Zhang, Huanzhen Fu, Yulan Liu, Dong Song, Xiaoyan |
author_facet | Zhang, Xinping Wang, Meng Tang, Fawei Zhang, Huanzhen Fu, Yulan Liu, Dong Song, Xiaoyan |
author_sort | Zhang, Xinping |
collection | PubMed |
description | Strong optical excitation of plasmonic nanostructures may induce simultaneous interband and intraband electronic transitions. However, interaction mechanisms between interband, intraband, and plasmon‐band processes have not been thoroughly understood. In particular, optical‐heating‐induced lattice expansion, which definitely leads to shift of the Fermi level, has not been taken into account in plasmonic studies. Here, it is shown that plasmonic bandedge shift is responsible for the optical modulation on the boundary between plasmonic electron oscillation and interband transitions via investigations on gold nanofilms and nanoparticles. Strong optical excitation induces transient depletion of the conduction band just below the Fermi level through intraband transitions, while the subsequent lattice heating induces transient thermal expansion and hence lowers the Fermi level. Both effects reduce the threshold for interband transitions and therefore push the plasmonic bandedge to the red. These discoveries introduce a first correlation between plasmonic response and optical excitation induced thermal expansion of lattices. The revealed Fermi‐level adjustment mechanism allows alignment of electronic levels at the metal–semiconductor interfaces, which applies to all conductive materials and renders reliable physics for the design of plasmonic or optoelectronic devices. |
format | Online Article Text |
id | pubmed-6974950 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | John Wiley and Sons Inc. |
record_format | MEDLINE/PubMed |
spelling | pubmed-69749502020-01-28 Transient Electronic Depletion and Lattice Expansion Induced Ultrafast Bandedge Plasmons Zhang, Xinping Wang, Meng Tang, Fawei Zhang, Huanzhen Fu, Yulan Liu, Dong Song, Xiaoyan Adv Sci (Weinh) Full Papers Strong optical excitation of plasmonic nanostructures may induce simultaneous interband and intraband electronic transitions. However, interaction mechanisms between interband, intraband, and plasmon‐band processes have not been thoroughly understood. In particular, optical‐heating‐induced lattice expansion, which definitely leads to shift of the Fermi level, has not been taken into account in plasmonic studies. Here, it is shown that plasmonic bandedge shift is responsible for the optical modulation on the boundary between plasmonic electron oscillation and interband transitions via investigations on gold nanofilms and nanoparticles. Strong optical excitation induces transient depletion of the conduction band just below the Fermi level through intraband transitions, while the subsequent lattice heating induces transient thermal expansion and hence lowers the Fermi level. Both effects reduce the threshold for interband transitions and therefore push the plasmonic bandedge to the red. These discoveries introduce a first correlation between plasmonic response and optical excitation induced thermal expansion of lattices. The revealed Fermi‐level adjustment mechanism allows alignment of electronic levels at the metal–semiconductor interfaces, which applies to all conductive materials and renders reliable physics for the design of plasmonic or optoelectronic devices. John Wiley and Sons Inc. 2019-11-27 /pmc/articles/PMC6974950/ /pubmed/31993295 http://dx.doi.org/10.1002/advs.201902408 Text en © 2019 The Authors. Published by WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Full Papers Zhang, Xinping Wang, Meng Tang, Fawei Zhang, Huanzhen Fu, Yulan Liu, Dong Song, Xiaoyan Transient Electronic Depletion and Lattice Expansion Induced Ultrafast Bandedge Plasmons |
title | Transient Electronic Depletion and Lattice Expansion Induced Ultrafast Bandedge Plasmons |
title_full | Transient Electronic Depletion and Lattice Expansion Induced Ultrafast Bandedge Plasmons |
title_fullStr | Transient Electronic Depletion and Lattice Expansion Induced Ultrafast Bandedge Plasmons |
title_full_unstemmed | Transient Electronic Depletion and Lattice Expansion Induced Ultrafast Bandedge Plasmons |
title_short | Transient Electronic Depletion and Lattice Expansion Induced Ultrafast Bandedge Plasmons |
title_sort | transient electronic depletion and lattice expansion induced ultrafast bandedge plasmons |
topic | Full Papers |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6974950/ https://www.ncbi.nlm.nih.gov/pubmed/31993295 http://dx.doi.org/10.1002/advs.201902408 |
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