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Transient Electronic Depletion and Lattice Expansion Induced Ultrafast Bandedge Plasmons

Strong optical excitation of plasmonic nanostructures may induce simultaneous interband and intraband electronic transitions. However, interaction mechanisms between interband, intraband, and plasmon‐band processes have not been thoroughly understood. In particular, optical‐heating‐induced lattice e...

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Autores principales: Zhang, Xinping, Wang, Meng, Tang, Fawei, Zhang, Huanzhen, Fu, Yulan, Liu, Dong, Song, Xiaoyan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6974950/
https://www.ncbi.nlm.nih.gov/pubmed/31993295
http://dx.doi.org/10.1002/advs.201902408
_version_ 1783490201696337920
author Zhang, Xinping
Wang, Meng
Tang, Fawei
Zhang, Huanzhen
Fu, Yulan
Liu, Dong
Song, Xiaoyan
author_facet Zhang, Xinping
Wang, Meng
Tang, Fawei
Zhang, Huanzhen
Fu, Yulan
Liu, Dong
Song, Xiaoyan
author_sort Zhang, Xinping
collection PubMed
description Strong optical excitation of plasmonic nanostructures may induce simultaneous interband and intraband electronic transitions. However, interaction mechanisms between interband, intraband, and plasmon‐band processes have not been thoroughly understood. In particular, optical‐heating‐induced lattice expansion, which definitely leads to shift of the Fermi level, has not been taken into account in plasmonic studies. Here, it is shown that plasmonic bandedge shift is responsible for the optical modulation on the boundary between plasmonic electron oscillation and interband transitions via investigations on gold nanofilms and nanoparticles. Strong optical excitation induces transient depletion of the conduction band just below the Fermi level through intraband transitions, while the subsequent lattice heating induces transient thermal expansion and hence lowers the Fermi level. Both effects reduce the threshold for interband transitions and therefore push the plasmonic bandedge to the red. These discoveries introduce a first correlation between plasmonic response and optical excitation induced thermal expansion of lattices. The revealed Fermi‐level adjustment mechanism allows alignment of electronic levels at the metal–semiconductor interfaces, which applies to all conductive materials and renders reliable physics for the design of plasmonic or optoelectronic devices.
format Online
Article
Text
id pubmed-6974950
institution National Center for Biotechnology Information
language English
publishDate 2019
publisher John Wiley and Sons Inc.
record_format MEDLINE/PubMed
spelling pubmed-69749502020-01-28 Transient Electronic Depletion and Lattice Expansion Induced Ultrafast Bandedge Plasmons Zhang, Xinping Wang, Meng Tang, Fawei Zhang, Huanzhen Fu, Yulan Liu, Dong Song, Xiaoyan Adv Sci (Weinh) Full Papers Strong optical excitation of plasmonic nanostructures may induce simultaneous interband and intraband electronic transitions. However, interaction mechanisms between interband, intraband, and plasmon‐band processes have not been thoroughly understood. In particular, optical‐heating‐induced lattice expansion, which definitely leads to shift of the Fermi level, has not been taken into account in plasmonic studies. Here, it is shown that plasmonic bandedge shift is responsible for the optical modulation on the boundary between plasmonic electron oscillation and interband transitions via investigations on gold nanofilms and nanoparticles. Strong optical excitation induces transient depletion of the conduction band just below the Fermi level through intraband transitions, while the subsequent lattice heating induces transient thermal expansion and hence lowers the Fermi level. Both effects reduce the threshold for interband transitions and therefore push the plasmonic bandedge to the red. These discoveries introduce a first correlation between plasmonic response and optical excitation induced thermal expansion of lattices. The revealed Fermi‐level adjustment mechanism allows alignment of electronic levels at the metal–semiconductor interfaces, which applies to all conductive materials and renders reliable physics for the design of plasmonic or optoelectronic devices. John Wiley and Sons Inc. 2019-11-27 /pmc/articles/PMC6974950/ /pubmed/31993295 http://dx.doi.org/10.1002/advs.201902408 Text en © 2019 The Authors. Published by WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
spellingShingle Full Papers
Zhang, Xinping
Wang, Meng
Tang, Fawei
Zhang, Huanzhen
Fu, Yulan
Liu, Dong
Song, Xiaoyan
Transient Electronic Depletion and Lattice Expansion Induced Ultrafast Bandedge Plasmons
title Transient Electronic Depletion and Lattice Expansion Induced Ultrafast Bandedge Plasmons
title_full Transient Electronic Depletion and Lattice Expansion Induced Ultrafast Bandedge Plasmons
title_fullStr Transient Electronic Depletion and Lattice Expansion Induced Ultrafast Bandedge Plasmons
title_full_unstemmed Transient Electronic Depletion and Lattice Expansion Induced Ultrafast Bandedge Plasmons
title_short Transient Electronic Depletion and Lattice Expansion Induced Ultrafast Bandedge Plasmons
title_sort transient electronic depletion and lattice expansion induced ultrafast bandedge plasmons
topic Full Papers
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6974950/
https://www.ncbi.nlm.nih.gov/pubmed/31993295
http://dx.doi.org/10.1002/advs.201902408
work_keys_str_mv AT zhangxinping transientelectronicdepletionandlatticeexpansioninducedultrafastbandedgeplasmons
AT wangmeng transientelectronicdepletionandlatticeexpansioninducedultrafastbandedgeplasmons
AT tangfawei transientelectronicdepletionandlatticeexpansioninducedultrafastbandedgeplasmons
AT zhanghuanzhen transientelectronicdepletionandlatticeexpansioninducedultrafastbandedgeplasmons
AT fuyulan transientelectronicdepletionandlatticeexpansioninducedultrafastbandedgeplasmons
AT liudong transientelectronicdepletionandlatticeexpansioninducedultrafastbandedgeplasmons
AT songxiaoyan transientelectronicdepletionandlatticeexpansioninducedultrafastbandedgeplasmons