Femtosecond Pump Probe Reflectivity Spectra in CdTe and GaAs Crystals at Room Temperature

Ultrafast pump probe reflectivity (PPR) signal near band edge is modeled by taking into account band filling (BF) and band gap renormalization (BGR) effects with the carrier density of ~10(17)/cm(3) in GaAs crystal at room temperature. The calculated results indicate that the transient reflectivity ΔR/R is determined by BF and BGR effects. The most interesting feature is that ΔR/R signal experiences a sign change from photo-bleaching (PB) to photo-absorption (PA) due to the competition between BF and BGR effects. We experimentally measured ΔR as a function of photon energy across band edge with carrier density of ~10(17)/cm(3) in GaAs and CdTe crystals, which has a similar trend as that calculated according to our model. In addition, the reflectivity is very sensitive to electron spin orientation, which is well confirmed by the corresponding experiments with 100 fs pump probe reflectivity spectroscopy in bulk CdTe. Our research in this work provides a method to study optoelectronic properties of conventional semiconductors at moderate carrier density excited by ultrafast laser pulse. Importantly, this model can be used for other novel semiconductor materials beyond GaAs and will provide new insights into the underlying spin dependent photophysics properties for new materials.