Control of Eu Oxidation State in Y(2)O(3−x)S(x):Eu Thin-Film Phosphors Prepared by Atomic Layer Deposition: A Structural and Photoluminescence Study

Structural and photoluminescence studies were carried out on Eu-doped Y(2)O(3−x)S(x) thin films grown by atomic layer deposition at 300 °C. (CH(3)Cp)(3)Y, H(2)O, and H(2)S were used as yttrium, oxygen, and sulfur precursors, respectively, while Eu(thd)(3) was used as the europium precursor. The Eu o...

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Detalles Bibliográficos
Autores principales: Rosa, José, Deuermeier, Jonas, Soininen, Pekka J., Bosund, Markus, Zhu, Zhen, Fortunato, Elvira, Martins, Rodrigo, Sugiyama, Mutsumi, Merdes, Saoussen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6981595/
https://www.ncbi.nlm.nih.gov/pubmed/31878064
http://dx.doi.org/10.3390/ma13010093
Descripción
Sumario:Structural and photoluminescence studies were carried out on Eu-doped Y(2)O(3−x)S(x) thin films grown by atomic layer deposition at 300 °C. (CH(3)Cp)(3)Y, H(2)O, and H(2)S were used as yttrium, oxygen, and sulfur precursors, respectively, while Eu(thd)(3) was used as the europium precursor. The Eu oxidation state was controlled during the growth process by following the Eu(thd)(3) pulse with either a H(2)S or O(3) pulse. The Eu(thd)(3)/O(3) pulse sequence led to photoluminescence emission above 550 nm, whereas the Eu(thd)(3)/H(2)S pulse sequence resulted in emission below 500 nm.

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