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Room-Temperature-Processed Amorphous Sn-In-O Electron Transport Layer for Perovskite Solar Cells
We report amorphous tin-indium-oxide (TIO, Sn fraction: >50 atomic percentage (at%)) thin films as a new electron transport layer (ETL) of perovskite solar cells (PSCs). TIO thin films with Sn fraction of 52, 77, 83, 92, and 100 at% were grown on crystalline indium-tin-oxide (ITO, Sn fraction: ~1...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6981739/ https://www.ncbi.nlm.nih.gov/pubmed/31861710 http://dx.doi.org/10.3390/ma13010032 |
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author | Baek, Seungtae Han, Jeong Woo Vidyasagar, Devthade Cho, Hanbyeol HA, Hwi-Heon Kim, Dong Hoe Heo, Young-Woo Lee, Sangwook |
author_facet | Baek, Seungtae Han, Jeong Woo Vidyasagar, Devthade Cho, Hanbyeol HA, Hwi-Heon Kim, Dong Hoe Heo, Young-Woo Lee, Sangwook |
author_sort | Baek, Seungtae |
collection | PubMed |
description | We report amorphous tin-indium-oxide (TIO, Sn fraction: >50 atomic percentage (at%)) thin films as a new electron transport layer (ETL) of perovskite solar cells (PSCs). TIO thin films with Sn fraction of 52, 77, 83, 92, and 100 at% were grown on crystalline indium-tin-oxide (ITO, Sn fraction: ~10 at%) thin films, a common transparent conducting oxide, by co-sputtering In(2)O(3) and SnO(2) at room temperature. The energy band structures of the amorphous TIO thin films were determined from the optical absorbance and the ultraviolet photoelectron spectra. All the examined compositions are characterized by a conduction band edge lying between that of ITO and that of perovskite (here, methylammonium lead triiodide), indicating that TIO is a potentially viable ETL of PSCs. The photovoltaic characteristics of the TIO-based PSCs were evaluated. Owing mainly to the highest fill factor and open circuit voltage, the optimal power conversion efficiency was obtained for the 77 at%-Sn TIO ETL with TiCl(4) treatment. The fill factor and the open circuit voltage changes with varying the Sn fraction, despite similar conduction band edges. We attribute these differences to the considerable changes in the electrical resistivity of the TIO ETL. This would have a significant effect on the shunt and/or the series resistances. The TIO ETL can be continuously grown on an ITO TCO in a chamber, as ITO and TIO are composed of identical elements, which would help to reduce production time and costs. |
format | Online Article Text |
id | pubmed-6981739 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-69817392020-02-07 Room-Temperature-Processed Amorphous Sn-In-O Electron Transport Layer for Perovskite Solar Cells Baek, Seungtae Han, Jeong Woo Vidyasagar, Devthade Cho, Hanbyeol HA, Hwi-Heon Kim, Dong Hoe Heo, Young-Woo Lee, Sangwook Materials (Basel) Article We report amorphous tin-indium-oxide (TIO, Sn fraction: >50 atomic percentage (at%)) thin films as a new electron transport layer (ETL) of perovskite solar cells (PSCs). TIO thin films with Sn fraction of 52, 77, 83, 92, and 100 at% were grown on crystalline indium-tin-oxide (ITO, Sn fraction: ~10 at%) thin films, a common transparent conducting oxide, by co-sputtering In(2)O(3) and SnO(2) at room temperature. The energy band structures of the amorphous TIO thin films were determined from the optical absorbance and the ultraviolet photoelectron spectra. All the examined compositions are characterized by a conduction band edge lying between that of ITO and that of perovskite (here, methylammonium lead triiodide), indicating that TIO is a potentially viable ETL of PSCs. The photovoltaic characteristics of the TIO-based PSCs were evaluated. Owing mainly to the highest fill factor and open circuit voltage, the optimal power conversion efficiency was obtained for the 77 at%-Sn TIO ETL with TiCl(4) treatment. The fill factor and the open circuit voltage changes with varying the Sn fraction, despite similar conduction band edges. We attribute these differences to the considerable changes in the electrical resistivity of the TIO ETL. This would have a significant effect on the shunt and/or the series resistances. The TIO ETL can be continuously grown on an ITO TCO in a chamber, as ITO and TIO are composed of identical elements, which would help to reduce production time and costs. MDPI 2019-12-19 /pmc/articles/PMC6981739/ /pubmed/31861710 http://dx.doi.org/10.3390/ma13010032 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Baek, Seungtae Han, Jeong Woo Vidyasagar, Devthade Cho, Hanbyeol HA, Hwi-Heon Kim, Dong Hoe Heo, Young-Woo Lee, Sangwook Room-Temperature-Processed Amorphous Sn-In-O Electron Transport Layer for Perovskite Solar Cells |
title | Room-Temperature-Processed Amorphous Sn-In-O Electron Transport Layer for Perovskite Solar Cells |
title_full | Room-Temperature-Processed Amorphous Sn-In-O Electron Transport Layer for Perovskite Solar Cells |
title_fullStr | Room-Temperature-Processed Amorphous Sn-In-O Electron Transport Layer for Perovskite Solar Cells |
title_full_unstemmed | Room-Temperature-Processed Amorphous Sn-In-O Electron Transport Layer for Perovskite Solar Cells |
title_short | Room-Temperature-Processed Amorphous Sn-In-O Electron Transport Layer for Perovskite Solar Cells |
title_sort | room-temperature-processed amorphous sn-in-o electron transport layer for perovskite solar cells |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6981739/ https://www.ncbi.nlm.nih.gov/pubmed/31861710 http://dx.doi.org/10.3390/ma13010032 |
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