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A 28 nm Bulk-CMOS Analog Front-End for High-Rate ATLAS Muon Drift-Tube Detectors
This paper presents the design and experimental characterization of a 28 nm Complementary Metal Oxide Semiconductor (CMOS) Analog Front-End (AFE) for fast-tracking small-diameter Muon Drift-Tube (sMDT) detectors. The device exploits an innovative analog signal processing that allows a strong increas...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6982720/ https://www.ncbi.nlm.nih.gov/pubmed/31861695 http://dx.doi.org/10.3390/s20010042 |
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author | Pipino, Alessandra Resta, Federica Mangiagalli, Luca De Matteis, Marcello Kroha, Hubert Richter, Robert Kortner, Oliver Baschirotto, Andrea |
author_facet | Pipino, Alessandra Resta, Federica Mangiagalli, Luca De Matteis, Marcello Kroha, Hubert Richter, Robert Kortner, Oliver Baschirotto, Andrea |
author_sort | Pipino, Alessandra |
collection | PubMed |
description | This paper presents the design and experimental characterization of a 28 nm Complementary Metal Oxide Semiconductor (CMOS) Analog Front-End (AFE) for fast-tracking small-diameter Muon Drift-Tube (sMDT) detectors. The device exploits an innovative analog signal processing that allows a strong increase in the detection rate of events and significantly reduces the impact of fake/pile-up events, which often corrupt incident radiation energy events. The proposed device converts the input charge coming from incident radiations into voltage by a dedicated Charge-Sensitive Preamplifier (CSPreamp). Therefore, the fast-tracking concept relies on sampling the slope of the CSPreamp output voltage and using it for detecting both the incident event arrival instant and the amount of charge that has been effectively read out by MDT detectors. This avoids the long processing times intrinsically needed for baseline recovery transient, during which the detected signal can be severely corrupted by additional and unwanted extra-events, resulting in extra-charge (and thus in CSP output voltage extra-transient) during the signal roll-off. The proposed analog channel operates with a 5–100 fC input charge range and has a maximum dead-time of 200 ns (against the 545 ns of the state-of-the-art). It occupies 0.03 mm(2) and consumes 1.9 mW from 1 V of supply voltage. |
format | Online Article Text |
id | pubmed-6982720 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-69827202020-02-28 A 28 nm Bulk-CMOS Analog Front-End for High-Rate ATLAS Muon Drift-Tube Detectors Pipino, Alessandra Resta, Federica Mangiagalli, Luca De Matteis, Marcello Kroha, Hubert Richter, Robert Kortner, Oliver Baschirotto, Andrea Sensors (Basel) Article This paper presents the design and experimental characterization of a 28 nm Complementary Metal Oxide Semiconductor (CMOS) Analog Front-End (AFE) for fast-tracking small-diameter Muon Drift-Tube (sMDT) detectors. The device exploits an innovative analog signal processing that allows a strong increase in the detection rate of events and significantly reduces the impact of fake/pile-up events, which often corrupt incident radiation energy events. The proposed device converts the input charge coming from incident radiations into voltage by a dedicated Charge-Sensitive Preamplifier (CSPreamp). Therefore, the fast-tracking concept relies on sampling the slope of the CSPreamp output voltage and using it for detecting both the incident event arrival instant and the amount of charge that has been effectively read out by MDT detectors. This avoids the long processing times intrinsically needed for baseline recovery transient, during which the detected signal can be severely corrupted by additional and unwanted extra-events, resulting in extra-charge (and thus in CSP output voltage extra-transient) during the signal roll-off. The proposed analog channel operates with a 5–100 fC input charge range and has a maximum dead-time of 200 ns (against the 545 ns of the state-of-the-art). It occupies 0.03 mm(2) and consumes 1.9 mW from 1 V of supply voltage. MDPI 2019-12-19 /pmc/articles/PMC6982720/ /pubmed/31861695 http://dx.doi.org/10.3390/s20010042 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Pipino, Alessandra Resta, Federica Mangiagalli, Luca De Matteis, Marcello Kroha, Hubert Richter, Robert Kortner, Oliver Baschirotto, Andrea A 28 nm Bulk-CMOS Analog Front-End for High-Rate ATLAS Muon Drift-Tube Detectors |
title | A 28 nm Bulk-CMOS Analog Front-End for High-Rate ATLAS Muon Drift-Tube Detectors |
title_full | A 28 nm Bulk-CMOS Analog Front-End for High-Rate ATLAS Muon Drift-Tube Detectors |
title_fullStr | A 28 nm Bulk-CMOS Analog Front-End for High-Rate ATLAS Muon Drift-Tube Detectors |
title_full_unstemmed | A 28 nm Bulk-CMOS Analog Front-End for High-Rate ATLAS Muon Drift-Tube Detectors |
title_short | A 28 nm Bulk-CMOS Analog Front-End for High-Rate ATLAS Muon Drift-Tube Detectors |
title_sort | 28 nm bulk-cmos analog front-end for high-rate atlas muon drift-tube detectors |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6982720/ https://www.ncbi.nlm.nih.gov/pubmed/31861695 http://dx.doi.org/10.3390/s20010042 |
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