Fast Response Solar-Blind Photodetector with a Quasi-Zener Tunneling Effect Based on Amorphous In-Doped Ga(2)O(3) Thin Films

A high-performance solar-blind photodetector with a metal–semiconductor–metal structure was fabricated based on amorphous In-doped Ga(2)O(3) thin films prepared at room temperature by radio frequency magnetron sputtering. The photodetector shows a high responsivity (18.06 A/W) at 235 nm with a fast...

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Detalles Bibliográficos
Autores principales: Fang, Mingzhi, Zhao, Weiguo, Li, Feifei, Zhu, Deliang, Han, Shun, Xu, Wangying, Liu, Wenjun, Cao, Peijiang, Fang, Ming, Lu, Youming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6982943/
https://www.ncbi.nlm.nih.gov/pubmed/31878186
http://dx.doi.org/10.3390/s20010129
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author Fang, Mingzhi
Zhao, Weiguo
Li, Feifei
Zhu, Deliang
Han, Shun
Xu, Wangying
Liu, Wenjun
Cao, Peijiang
Fang, Ming
Lu, Youming
author_facet Fang, Mingzhi
Zhao, Weiguo
Li, Feifei
Zhu, Deliang
Han, Shun
Xu, Wangying
Liu, Wenjun
Cao, Peijiang
Fang, Ming
Lu, Youming
author_sort Fang, Mingzhi
collection PubMed
description A high-performance solar-blind photodetector with a metal–semiconductor–metal structure was fabricated based on amorphous In-doped Ga(2)O(3) thin films prepared at room temperature by radio frequency magnetron sputtering. The photodetector shows a high responsivity (18.06 A/W) at 235 nm with a fast rise time (4.9 μs) and a rapid decay time (230 μs). The detection range was broadened compared with an individual Ga(2)O(3) photodetector because of In doping. In addition, the uneven In distribution at different areas in the film results in different resistances, which causes a quasi-Zener tunneling internal gain mechanism. The quasi-Zener tunneling internal gain mechanism has a positive impact on the fast response speed and high responsivity.
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spelling pubmed-69829432020-02-06 Fast Response Solar-Blind Photodetector with a Quasi-Zener Tunneling Effect Based on Amorphous In-Doped Ga(2)O(3) Thin Films Fang, Mingzhi Zhao, Weiguo Li, Feifei Zhu, Deliang Han, Shun Xu, Wangying Liu, Wenjun Cao, Peijiang Fang, Ming Lu, Youming Sensors (Basel) Article A high-performance solar-blind photodetector with a metal–semiconductor–metal structure was fabricated based on amorphous In-doped Ga(2)O(3) thin films prepared at room temperature by radio frequency magnetron sputtering. The photodetector shows a high responsivity (18.06 A/W) at 235 nm with a fast rise time (4.9 μs) and a rapid decay time (230 μs). The detection range was broadened compared with an individual Ga(2)O(3) photodetector because of In doping. In addition, the uneven In distribution at different areas in the film results in different resistances, which causes a quasi-Zener tunneling internal gain mechanism. The quasi-Zener tunneling internal gain mechanism has a positive impact on the fast response speed and high responsivity. MDPI 2019-12-24 /pmc/articles/PMC6982943/ /pubmed/31878186 http://dx.doi.org/10.3390/s20010129 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Fang, Mingzhi
Zhao, Weiguo
Li, Feifei
Zhu, Deliang
Han, Shun
Xu, Wangying
Liu, Wenjun
Cao, Peijiang
Fang, Ming
Lu, Youming
Fast Response Solar-Blind Photodetector with a Quasi-Zener Tunneling Effect Based on Amorphous In-Doped Ga(2)O(3) Thin Films
title Fast Response Solar-Blind Photodetector with a Quasi-Zener Tunneling Effect Based on Amorphous In-Doped Ga(2)O(3) Thin Films
title_full Fast Response Solar-Blind Photodetector with a Quasi-Zener Tunneling Effect Based on Amorphous In-Doped Ga(2)O(3) Thin Films
title_fullStr Fast Response Solar-Blind Photodetector with a Quasi-Zener Tunneling Effect Based on Amorphous In-Doped Ga(2)O(3) Thin Films
title_full_unstemmed Fast Response Solar-Blind Photodetector with a Quasi-Zener Tunneling Effect Based on Amorphous In-Doped Ga(2)O(3) Thin Films
title_short Fast Response Solar-Blind Photodetector with a Quasi-Zener Tunneling Effect Based on Amorphous In-Doped Ga(2)O(3) Thin Films
title_sort fast response solar-blind photodetector with a quasi-zener tunneling effect based on amorphous in-doped ga(2)o(3) thin films
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6982943/
https://www.ncbi.nlm.nih.gov/pubmed/31878186
http://dx.doi.org/10.3390/s20010129
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