Fast Response Solar-Blind Photodetector with a Quasi-Zener Tunneling Effect Based on Amorphous In-Doped Ga(2)O(3) Thin Films

A high-performance solar-blind photodetector with a metal–semiconductor–metal structure was fabricated based on amorphous In-doped Ga(2)O(3) thin films prepared at room temperature by radio frequency magnetron sputtering. The photodetector shows a high responsivity (18.06 A/W) at 235 nm with a fast...

Descripción completa

Detalles Bibliográficos
Autores principales: Fang, Mingzhi, Zhao, Weiguo, Li, Feifei, Zhu, Deliang, Han, Shun, Xu, Wangying, Liu, Wenjun, Cao, Peijiang, Fang, Ming, Lu, Youming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6982943/
https://www.ncbi.nlm.nih.gov/pubmed/31878186
http://dx.doi.org/10.3390/s20010129

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6982943/
https://www.ncbi.nlm.nih.gov/pubmed/31878186
http://dx.doi.org/10.3390/s20010129

Ejemplares similares