Study of Metal–Semiconductor–Metal CH(3)NH(3)PbBr(3) Perovskite Photodetectors Prepared by Inverse Temperature Crystallization Method

Numerous studies have addressed the use of perovskite materials for fabricating a wide range of optoelectronic devices. This study employs the deposition of an electron transport layer of C(60) and an Ag electrode on CH(3)NH(3)PbBr(3) perovskite crystals to complete a photodetector structure, which exhibits a metal–semiconductor–metal (MSM) type structure. First, CH(3)NH(3)PbBr(3) perovskite crystals were grown by inverse temperature crystallization (ITC) in a pre-heated circulator oven. This oven was able to supply uniform heat for facilitating the growth of high-quality and large-area crystals. Second, the different growth temperatures for CH(3)NH(3)PbBr(3) perovskite crystals were investigated. The electrical, optical, and morphological characteristics of the perovskite crystals were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet-visible spectroscopy, and photoluminescence (PL). Finally, the CH(3)NH(3)PbBr(3) perovskite crystals were observed to form a contact with the Ag/C(60) as the photodetector, which revealed a responsivity of 24.5 A/W.