A Time-of-Flight Range Sensor Using Four-Tap Lock-In Pixels with High near Infrared Sensitivity for LiDAR Applications

In this paper, a back-illuminated (BSI) time-of-flight (TOF) sensor using 0.2 µm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology is developed for long-range laser imaging detection and ranging (LiDAR) application. A 200 µm-thick bulk silicon in the SOI substrate...

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Detalles Bibliográficos
Autores principales: Lee, Sanggwon, Yasutomi, Keita, Morita, Masato, Kawanishi, Hodaka, Kawahito, Shoji
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6983234/
https://www.ncbi.nlm.nih.gov/pubmed/31878103
http://dx.doi.org/10.3390/s20010116

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6983234/
https://www.ncbi.nlm.nih.gov/pubmed/31878103
http://dx.doi.org/10.3390/s20010116

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