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A Time-of-Flight Range Sensor Using Four-Tap Lock-In Pixels with High near Infrared Sensitivity for LiDAR Applications
In this paper, a back-illuminated (BSI) time-of-flight (TOF) sensor using 0.2 µm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology is developed for long-range laser imaging detection and ranging (LiDAR) application. A 200 µm-thick bulk silicon in the SOI substrate...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6983234/ https://www.ncbi.nlm.nih.gov/pubmed/31878103 http://dx.doi.org/10.3390/s20010116 |