Cargando…

Morphological, optical and photovoltaic characteristics of MoSe(2)/SiO(x)/Si heterojunctions

This work reports the effect of different processing parameters on the structural and morphological characteristics of MoSe(2) layers grown by chemical vapour deposition (CVD), using MoO(3) and Se powders as solid precursors. It shows the strong dependence of the size, shape and thickness of the MoS...

Descripción completa

Detalles Bibliográficos
Autores principales: Silva, J. P. B., Almeida Marques, C., Viana, A. S., Santos, L. F., Gwozdz, K., Popko, E., Connolly, J. P., Veltruská, K., Matolín, V., Conde, O.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6985159/
https://www.ncbi.nlm.nih.gov/pubmed/31988375
http://dx.doi.org/10.1038/s41598-020-58164-7
_version_ 1783491762403147776
author Silva, J. P. B.
Almeida Marques, C.
Viana, A. S.
Santos, L. F.
Gwozdz, K.
Popko, E.
Connolly, J. P.
Veltruská, K.
Matolín, V.
Conde, O.
author_facet Silva, J. P. B.
Almeida Marques, C.
Viana, A. S.
Santos, L. F.
Gwozdz, K.
Popko, E.
Connolly, J. P.
Veltruská, K.
Matolín, V.
Conde, O.
author_sort Silva, J. P. B.
collection PubMed
description This work reports the effect of different processing parameters on the structural and morphological characteristics of MoSe(2) layers grown by chemical vapour deposition (CVD), using MoO(3) and Se powders as solid precursors. It shows the strong dependence of the size, shape and thickness of the MoSe(2) layers on the processing parameters. The morphology of the samples was investigated by field emission scanning electron microscopy (FESEM) and the thickness of the deposited layers was determined by atomic force microscopy (AFM). Raman and photoluminescence (PL) spectroscopies were used to confirm the high quality of the MoSe(2) layers. Surface composition was examined by photoelectron spectroscopy (XPS). Moreover, the MoSe(2)/SiO(x)/Si heterojunctions exhibit diode behaviour, with a rectification ratio of 10, measured at ±2.0 V, which is due to the p-i-n heterojunctions formed at the p-Si/SiO(x)/MoSe(2) interface. A photovoltaic effect was observed with a short circuit current density (J(sc)), open circuit voltage (V(OC)) and efficiency of −0.80 mA/cm(2), 1.55 V and 0.5%, respectively. These results provide a guide for the preparation of p-i-n heterojunctions based on few-layer MoSe(2) with improved photovoltaic response.
format Online
Article
Text
id pubmed-6985159
institution National Center for Biotechnology Information
language English
publishDate 2020
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-69851592020-01-31 Morphological, optical and photovoltaic characteristics of MoSe(2)/SiO(x)/Si heterojunctions Silva, J. P. B. Almeida Marques, C. Viana, A. S. Santos, L. F. Gwozdz, K. Popko, E. Connolly, J. P. Veltruská, K. Matolín, V. Conde, O. Sci Rep Article This work reports the effect of different processing parameters on the structural and morphological characteristics of MoSe(2) layers grown by chemical vapour deposition (CVD), using MoO(3) and Se powders as solid precursors. It shows the strong dependence of the size, shape and thickness of the MoSe(2) layers on the processing parameters. The morphology of the samples was investigated by field emission scanning electron microscopy (FESEM) and the thickness of the deposited layers was determined by atomic force microscopy (AFM). Raman and photoluminescence (PL) spectroscopies were used to confirm the high quality of the MoSe(2) layers. Surface composition was examined by photoelectron spectroscopy (XPS). Moreover, the MoSe(2)/SiO(x)/Si heterojunctions exhibit diode behaviour, with a rectification ratio of 10, measured at ±2.0 V, which is due to the p-i-n heterojunctions formed at the p-Si/SiO(x)/MoSe(2) interface. A photovoltaic effect was observed with a short circuit current density (J(sc)), open circuit voltage (V(OC)) and efficiency of −0.80 mA/cm(2), 1.55 V and 0.5%, respectively. These results provide a guide for the preparation of p-i-n heterojunctions based on few-layer MoSe(2) with improved photovoltaic response. Nature Publishing Group UK 2020-01-27 /pmc/articles/PMC6985159/ /pubmed/31988375 http://dx.doi.org/10.1038/s41598-020-58164-7 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Silva, J. P. B.
Almeida Marques, C.
Viana, A. S.
Santos, L. F.
Gwozdz, K.
Popko, E.
Connolly, J. P.
Veltruská, K.
Matolín, V.
Conde, O.
Morphological, optical and photovoltaic characteristics of MoSe(2)/SiO(x)/Si heterojunctions
title Morphological, optical and photovoltaic characteristics of MoSe(2)/SiO(x)/Si heterojunctions
title_full Morphological, optical and photovoltaic characteristics of MoSe(2)/SiO(x)/Si heterojunctions
title_fullStr Morphological, optical and photovoltaic characteristics of MoSe(2)/SiO(x)/Si heterojunctions
title_full_unstemmed Morphological, optical and photovoltaic characteristics of MoSe(2)/SiO(x)/Si heterojunctions
title_short Morphological, optical and photovoltaic characteristics of MoSe(2)/SiO(x)/Si heterojunctions
title_sort morphological, optical and photovoltaic characteristics of mose(2)/sio(x)/si heterojunctions
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6985159/
https://www.ncbi.nlm.nih.gov/pubmed/31988375
http://dx.doi.org/10.1038/s41598-020-58164-7
work_keys_str_mv AT silvajpb morphologicalopticalandphotovoltaiccharacteristicsofmose2sioxsiheterojunctions
AT almeidamarquesc morphologicalopticalandphotovoltaiccharacteristicsofmose2sioxsiheterojunctions
AT vianaas morphologicalopticalandphotovoltaiccharacteristicsofmose2sioxsiheterojunctions
AT santoslf morphologicalopticalandphotovoltaiccharacteristicsofmose2sioxsiheterojunctions
AT gwozdzk morphologicalopticalandphotovoltaiccharacteristicsofmose2sioxsiheterojunctions
AT popkoe morphologicalopticalandphotovoltaiccharacteristicsofmose2sioxsiheterojunctions
AT connollyjp morphologicalopticalandphotovoltaiccharacteristicsofmose2sioxsiheterojunctions
AT veltruskak morphologicalopticalandphotovoltaiccharacteristicsofmose2sioxsiheterojunctions
AT matolinv morphologicalopticalandphotovoltaiccharacteristicsofmose2sioxsiheterojunctions
AT condeo morphologicalopticalandphotovoltaiccharacteristicsofmose2sioxsiheterojunctions