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Multi-level anomalous Hall resistance in a single Hall cross for the applications of neuromorphic device

We demonstrate the process of obtaining memristive multi-states Hall resistance (R(H)) change in a single Hall cross (SHC) structure. Otherwise, the working mechanism successfully mimics the behavior of biological neural systems. The motion of domain wall (DW) in the SHC was used to control the asce...

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Detalles Bibliográficos
Autores principales: Kim, Y.-U., Kwon, J., Hwang, H.-K., Purnama, I., You, C.-Y.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6987114/
https://www.ncbi.nlm.nih.gov/pubmed/31992806
http://dx.doi.org/10.1038/s41598-020-58223-z