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Athermal Crystal Defect Dynamics in Si Revealed by Cryo-High-Voltage Electron Microscopy
[Image: see text] Low-temperature crystal defect dynamics in Si has been studied by a newly developed cryo-high-voltage electron microscopy. The planar {113} defects of self-interstitial atoms were introduced at 94 K by 1 MeV electron irradiation with damage higher than 0.42 displacements per atom (...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6990428/ https://www.ncbi.nlm.nih.gov/pubmed/32010818 http://dx.doi.org/10.1021/acsomega.9b03028 |