Cargando…

Valley phonons and exciton complexes in a monolayer semiconductor

The coupling between spin, charge, and lattice degrees of freedom plays an important role in a wide range of fundamental phenomena. Monolayer semiconducting transitional metal dichalcogenides have emerged as an outstanding platform for studying these coupling effects. Here, we report the observation...

Descripción completa

Detalles Bibliográficos
Autores principales: He, Minhao, Rivera, Pasqual, Van Tuan, Dinh, Wilson, Nathan P., Yang, Min, Taniguchi, Takashi, Watanabe, Kenji, Yan, Jiaqiang, Mandrus, David G., Yu, Hongyi, Dery, Hanan, Yao, Wang, Xu, Xiaodong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6992782/
https://www.ncbi.nlm.nih.gov/pubmed/32001715
http://dx.doi.org/10.1038/s41467-020-14472-0
_version_ 1783492905723232256
author He, Minhao
Rivera, Pasqual
Van Tuan, Dinh
Wilson, Nathan P.
Yang, Min
Taniguchi, Takashi
Watanabe, Kenji
Yan, Jiaqiang
Mandrus, David G.
Yu, Hongyi
Dery, Hanan
Yao, Wang
Xu, Xiaodong
author_facet He, Minhao
Rivera, Pasqual
Van Tuan, Dinh
Wilson, Nathan P.
Yang, Min
Taniguchi, Takashi
Watanabe, Kenji
Yan, Jiaqiang
Mandrus, David G.
Yu, Hongyi
Dery, Hanan
Yao, Wang
Xu, Xiaodong
author_sort He, Minhao
collection PubMed
description The coupling between spin, charge, and lattice degrees of freedom plays an important role in a wide range of fundamental phenomena. Monolayer semiconducting transitional metal dichalcogenides have emerged as an outstanding platform for studying these coupling effects. Here, we report the observation of multiple valley phonons – phonons with momentum vectors pointing to the corners of the hexagonal Brillouin zone – and the resulting exciton complexes in the monolayer semiconductor WSe(2). We find that these valley phonons lead to efficient intervalley scattering of quasi particles in both exciton formation and relaxation. This leads to a series of photoluminescence peaks as valley phonon replicas of dark trions. Using identified valley phonons, we also uncover an intervalley exciton near charge neutrality. Our work not only identifies a number of previously unknown 2D excitonic species, but also shows that monolayer WSe(2) is a prime candidate for studying interactions between spin, pseudospin, and zone-edge phonons.
format Online
Article
Text
id pubmed-6992782
institution National Center for Biotechnology Information
language English
publishDate 2020
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-69927822020-02-03 Valley phonons and exciton complexes in a monolayer semiconductor He, Minhao Rivera, Pasqual Van Tuan, Dinh Wilson, Nathan P. Yang, Min Taniguchi, Takashi Watanabe, Kenji Yan, Jiaqiang Mandrus, David G. Yu, Hongyi Dery, Hanan Yao, Wang Xu, Xiaodong Nat Commun Article The coupling between spin, charge, and lattice degrees of freedom plays an important role in a wide range of fundamental phenomena. Monolayer semiconducting transitional metal dichalcogenides have emerged as an outstanding platform for studying these coupling effects. Here, we report the observation of multiple valley phonons – phonons with momentum vectors pointing to the corners of the hexagonal Brillouin zone – and the resulting exciton complexes in the monolayer semiconductor WSe(2). We find that these valley phonons lead to efficient intervalley scattering of quasi particles in both exciton formation and relaxation. This leads to a series of photoluminescence peaks as valley phonon replicas of dark trions. Using identified valley phonons, we also uncover an intervalley exciton near charge neutrality. Our work not only identifies a number of previously unknown 2D excitonic species, but also shows that monolayer WSe(2) is a prime candidate for studying interactions between spin, pseudospin, and zone-edge phonons. Nature Publishing Group UK 2020-01-30 /pmc/articles/PMC6992782/ /pubmed/32001715 http://dx.doi.org/10.1038/s41467-020-14472-0 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
He, Minhao
Rivera, Pasqual
Van Tuan, Dinh
Wilson, Nathan P.
Yang, Min
Taniguchi, Takashi
Watanabe, Kenji
Yan, Jiaqiang
Mandrus, David G.
Yu, Hongyi
Dery, Hanan
Yao, Wang
Xu, Xiaodong
Valley phonons and exciton complexes in a monolayer semiconductor
title Valley phonons and exciton complexes in a monolayer semiconductor
title_full Valley phonons and exciton complexes in a monolayer semiconductor
title_fullStr Valley phonons and exciton complexes in a monolayer semiconductor
title_full_unstemmed Valley phonons and exciton complexes in a monolayer semiconductor
title_short Valley phonons and exciton complexes in a monolayer semiconductor
title_sort valley phonons and exciton complexes in a monolayer semiconductor
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6992782/
https://www.ncbi.nlm.nih.gov/pubmed/32001715
http://dx.doi.org/10.1038/s41467-020-14472-0
work_keys_str_mv AT heminhao valleyphononsandexcitoncomplexesinamonolayersemiconductor
AT riverapasqual valleyphononsandexcitoncomplexesinamonolayersemiconductor
AT vantuandinh valleyphononsandexcitoncomplexesinamonolayersemiconductor
AT wilsonnathanp valleyphononsandexcitoncomplexesinamonolayersemiconductor
AT yangmin valleyphononsandexcitoncomplexesinamonolayersemiconductor
AT taniguchitakashi valleyphononsandexcitoncomplexesinamonolayersemiconductor
AT watanabekenji valleyphononsandexcitoncomplexesinamonolayersemiconductor
AT yanjiaqiang valleyphononsandexcitoncomplexesinamonolayersemiconductor
AT mandrusdavidg valleyphononsandexcitoncomplexesinamonolayersemiconductor
AT yuhongyi valleyphononsandexcitoncomplexesinamonolayersemiconductor
AT deryhanan valleyphononsandexcitoncomplexesinamonolayersemiconductor
AT yaowang valleyphononsandexcitoncomplexesinamonolayersemiconductor
AT xuxiaodong valleyphononsandexcitoncomplexesinamonolayersemiconductor