GaAs(1-x)Bi(x) growth on Ge: anti-phase domains, ordering, and exciton localization

The dilute bismide alloy GaAs(1-x)Bi(x) has drawn significant attention from researchers interested in its fundamental properties and the potential for infrared optoelectronics applications. To extend the study of bismides, molecular-beam heteroepitaxy of nominally 1.0 eV bandgap bismide on Ge subst...

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Detalles Bibliográficos
Autores principales: Paulauskas, Tadas, Pačebutas, Vaidas, Geižutis, Andrejus, Stanionytė, Sandra, Dudutienė, Evelina, Skapas, Martynas, Naujokaitis, Arnas, Strazdienė, Viktorija, Čechavičius, Bronislovas, Čaplovičová, Mária, Vretenár, Viliam, Jakieła, Rafał, Krotkus, Arūnas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7005183/
https://www.ncbi.nlm.nih.gov/pubmed/32029827
http://dx.doi.org/10.1038/s41598-020-58812-y

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