Cargando…
Highly Efficient Excitonic Recombination of Non-polar ([Formula: see text] ) GaN Nanocrystals for Visible Light Emitter by Hydride Vapour Phase Epitaxy
While non-polar nanostructured-GaN crystals are considered as a prospective material for the realization of futuristic opto-electronic application, the formation of non-polar GaN nanocrystals (NCs) with highly efficient visible emission characteristics remain unquestionable up to now. Here, we repor...
Autores principales: | , , , , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7005866/ https://www.ncbi.nlm.nih.gov/pubmed/32034209 http://dx.doi.org/10.1038/s41598-020-58887-7 |
_version_ | 1783495026512232448 |
---|---|
author | Lee, Moonsang Lee, Dongyun Baik, Hionsuck Kim, Heejin Jeong, Yesul Yang, Mino Lee, Hyun Uk Hahm, Myung Gwan Kim, Jaekyun |
author_facet | Lee, Moonsang Lee, Dongyun Baik, Hionsuck Kim, Heejin Jeong, Yesul Yang, Mino Lee, Hyun Uk Hahm, Myung Gwan Kim, Jaekyun |
author_sort | Lee, Moonsang |
collection | PubMed |
description | While non-polar nanostructured-GaN crystals are considered as a prospective material for the realization of futuristic opto-electronic application, the formation of non-polar GaN nanocrystals (NCs) with highly efficient visible emission characteristics remain unquestionable up to now. Here, we report the oxygen-incorporated a-plane GaN NCs with highly visible illumination excitonic recombination characteristics. Epitaxially aligned a-plane NCs with average diameter of 100 nm were formed on r-plane sapphire substrates by hydride vapor phase epitaxy (HVPE), accompanied by the oxygen supply during the growth. X-ray photoemission spectroscopy measurements proved that the NCs exhibited Ga-O bonding in the materials, suggesting the formation of oxidized states in the bandgap. It was found that the NCs emitted the visible luminescence wavelength of 400‒500 nm and 680‒720 nm, which is attributed to the transition from oxygen-induced localized states. Furthermore, time-resolved photoluminescence studies revealed the significant suppression of the quantum confined Stark effect and highly efficient excitonic recombination within GaN NCs. Therefore, we believe that the HVPE non-polar GaN NCs can guide the simple and efficient way toward the nitride-based next-generation nano-photonic devices. |
format | Online Article Text |
id | pubmed-7005866 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-70058662020-02-18 Highly Efficient Excitonic Recombination of Non-polar ([Formula: see text] ) GaN Nanocrystals for Visible Light Emitter by Hydride Vapour Phase Epitaxy Lee, Moonsang Lee, Dongyun Baik, Hionsuck Kim, Heejin Jeong, Yesul Yang, Mino Lee, Hyun Uk Hahm, Myung Gwan Kim, Jaekyun Sci Rep Article While non-polar nanostructured-GaN crystals are considered as a prospective material for the realization of futuristic opto-electronic application, the formation of non-polar GaN nanocrystals (NCs) with highly efficient visible emission characteristics remain unquestionable up to now. Here, we report the oxygen-incorporated a-plane GaN NCs with highly visible illumination excitonic recombination characteristics. Epitaxially aligned a-plane NCs with average diameter of 100 nm were formed on r-plane sapphire substrates by hydride vapor phase epitaxy (HVPE), accompanied by the oxygen supply during the growth. X-ray photoemission spectroscopy measurements proved that the NCs exhibited Ga-O bonding in the materials, suggesting the formation of oxidized states in the bandgap. It was found that the NCs emitted the visible luminescence wavelength of 400‒500 nm and 680‒720 nm, which is attributed to the transition from oxygen-induced localized states. Furthermore, time-resolved photoluminescence studies revealed the significant suppression of the quantum confined Stark effect and highly efficient excitonic recombination within GaN NCs. Therefore, we believe that the HVPE non-polar GaN NCs can guide the simple and efficient way toward the nitride-based next-generation nano-photonic devices. Nature Publishing Group UK 2020-02-07 /pmc/articles/PMC7005866/ /pubmed/32034209 http://dx.doi.org/10.1038/s41598-020-58887-7 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Lee, Moonsang Lee, Dongyun Baik, Hionsuck Kim, Heejin Jeong, Yesul Yang, Mino Lee, Hyun Uk Hahm, Myung Gwan Kim, Jaekyun Highly Efficient Excitonic Recombination of Non-polar ([Formula: see text] ) GaN Nanocrystals for Visible Light Emitter by Hydride Vapour Phase Epitaxy |
title | Highly Efficient Excitonic Recombination of Non-polar ([Formula: see text] ) GaN Nanocrystals for Visible Light Emitter by Hydride Vapour Phase Epitaxy |
title_full | Highly Efficient Excitonic Recombination of Non-polar ([Formula: see text] ) GaN Nanocrystals for Visible Light Emitter by Hydride Vapour Phase Epitaxy |
title_fullStr | Highly Efficient Excitonic Recombination of Non-polar ([Formula: see text] ) GaN Nanocrystals for Visible Light Emitter by Hydride Vapour Phase Epitaxy |
title_full_unstemmed | Highly Efficient Excitonic Recombination of Non-polar ([Formula: see text] ) GaN Nanocrystals for Visible Light Emitter by Hydride Vapour Phase Epitaxy |
title_short | Highly Efficient Excitonic Recombination of Non-polar ([Formula: see text] ) GaN Nanocrystals for Visible Light Emitter by Hydride Vapour Phase Epitaxy |
title_sort | highly efficient excitonic recombination of non-polar ([formula: see text] ) gan nanocrystals for visible light emitter by hydride vapour phase epitaxy |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7005866/ https://www.ncbi.nlm.nih.gov/pubmed/32034209 http://dx.doi.org/10.1038/s41598-020-58887-7 |
work_keys_str_mv | AT leemoonsang highlyefficientexcitonicrecombinationofnonpolarformulaseetextgannanocrystalsforvisiblelightemitterbyhydridevapourphaseepitaxy AT leedongyun highlyefficientexcitonicrecombinationofnonpolarformulaseetextgannanocrystalsforvisiblelightemitterbyhydridevapourphaseepitaxy AT baikhionsuck highlyefficientexcitonicrecombinationofnonpolarformulaseetextgannanocrystalsforvisiblelightemitterbyhydridevapourphaseepitaxy AT kimheejin highlyefficientexcitonicrecombinationofnonpolarformulaseetextgannanocrystalsforvisiblelightemitterbyhydridevapourphaseepitaxy AT jeongyesul highlyefficientexcitonicrecombinationofnonpolarformulaseetextgannanocrystalsforvisiblelightemitterbyhydridevapourphaseepitaxy AT yangmino highlyefficientexcitonicrecombinationofnonpolarformulaseetextgannanocrystalsforvisiblelightemitterbyhydridevapourphaseepitaxy AT leehyunuk highlyefficientexcitonicrecombinationofnonpolarformulaseetextgannanocrystalsforvisiblelightemitterbyhydridevapourphaseepitaxy AT hahmmyunggwan highlyefficientexcitonicrecombinationofnonpolarformulaseetextgannanocrystalsforvisiblelightemitterbyhydridevapourphaseepitaxy AT kimjaekyun highlyefficientexcitonicrecombinationofnonpolarformulaseetextgannanocrystalsforvisiblelightemitterbyhydridevapourphaseepitaxy |