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High mobility in a van der Waals layered antiferromagnetic metal

Van der Waals (vdW) materials with magnetic order have been heavily pursued for fundamental physics as well as for device design. Despite the rapid advances, so far, they are mainly insulating or semiconducting, and none of them has a high electronic mobility—a property that is rare in layered vdW m...

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Autores principales: Lei, Shiming, Lin, Jingjing, Jia, Yanyu, Gray, Mason, Topp, Andreas, Farahi, Gelareh, Klemenz, Sebastian, Gao, Tong, Rodolakis, Fanny, McChesney, Jessica L., Ast, Christian R., Yazdani, Ali, Burch, Kenneth S., Wu, Sanfeng, Ong, Nai Phuan, Schoop, Leslie M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7007265/
https://www.ncbi.nlm.nih.gov/pubmed/32083184
http://dx.doi.org/10.1126/sciadv.aay6407
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author Lei, Shiming
Lin, Jingjing
Jia, Yanyu
Gray, Mason
Topp, Andreas
Farahi, Gelareh
Klemenz, Sebastian
Gao, Tong
Rodolakis, Fanny
McChesney, Jessica L.
Ast, Christian R.
Yazdani, Ali
Burch, Kenneth S.
Wu, Sanfeng
Ong, Nai Phuan
Schoop, Leslie M.
author_facet Lei, Shiming
Lin, Jingjing
Jia, Yanyu
Gray, Mason
Topp, Andreas
Farahi, Gelareh
Klemenz, Sebastian
Gao, Tong
Rodolakis, Fanny
McChesney, Jessica L.
Ast, Christian R.
Yazdani, Ali
Burch, Kenneth S.
Wu, Sanfeng
Ong, Nai Phuan
Schoop, Leslie M.
author_sort Lei, Shiming
collection PubMed
description Van der Waals (vdW) materials with magnetic order have been heavily pursued for fundamental physics as well as for device design. Despite the rapid advances, so far, they are mainly insulating or semiconducting, and none of them has a high electronic mobility—a property that is rare in layered vdW materials in general. The realization of a high-mobility vdW material that also exhibits magnetic order would open the possibility for novel magnetic twistronic or spintronic devices. Here, we report very high carrier mobility in the layered vdW antiferromagnet GdTe(3). The electron mobility is beyond 60,000 cm(2) V(−1) s(−1), which is the highest among all known layered magnetic materials, to the best of our knowledge. Among all known vdW materials, the mobility of bulk GdTe(3) is comparable to that of black phosphorus. By mechanical exfoliation, we further demonstrate that GdTe(3) can be exfoliated to ultrathin flakes of three monolayers.
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spelling pubmed-70072652020-02-20 High mobility in a van der Waals layered antiferromagnetic metal Lei, Shiming Lin, Jingjing Jia, Yanyu Gray, Mason Topp, Andreas Farahi, Gelareh Klemenz, Sebastian Gao, Tong Rodolakis, Fanny McChesney, Jessica L. Ast, Christian R. Yazdani, Ali Burch, Kenneth S. Wu, Sanfeng Ong, Nai Phuan Schoop, Leslie M. Sci Adv Research Articles Van der Waals (vdW) materials with magnetic order have been heavily pursued for fundamental physics as well as for device design. Despite the rapid advances, so far, they are mainly insulating or semiconducting, and none of them has a high electronic mobility—a property that is rare in layered vdW materials in general. The realization of a high-mobility vdW material that also exhibits magnetic order would open the possibility for novel magnetic twistronic or spintronic devices. Here, we report very high carrier mobility in the layered vdW antiferromagnet GdTe(3). The electron mobility is beyond 60,000 cm(2) V(−1) s(−1), which is the highest among all known layered magnetic materials, to the best of our knowledge. Among all known vdW materials, the mobility of bulk GdTe(3) is comparable to that of black phosphorus. By mechanical exfoliation, we further demonstrate that GdTe(3) can be exfoliated to ultrathin flakes of three monolayers. American Association for the Advancement of Science 2020-02-07 /pmc/articles/PMC7007265/ /pubmed/32083184 http://dx.doi.org/10.1126/sciadv.aay6407 Text en Copyright © 2020 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). http://creativecommons.org/licenses/by-nc/4.0/ This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license (http://creativecommons.org/licenses/by-nc/4.0/) , which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.
spellingShingle Research Articles
Lei, Shiming
Lin, Jingjing
Jia, Yanyu
Gray, Mason
Topp, Andreas
Farahi, Gelareh
Klemenz, Sebastian
Gao, Tong
Rodolakis, Fanny
McChesney, Jessica L.
Ast, Christian R.
Yazdani, Ali
Burch, Kenneth S.
Wu, Sanfeng
Ong, Nai Phuan
Schoop, Leslie M.
High mobility in a van der Waals layered antiferromagnetic metal
title High mobility in a van der Waals layered antiferromagnetic metal
title_full High mobility in a van der Waals layered antiferromagnetic metal
title_fullStr High mobility in a van der Waals layered antiferromagnetic metal
title_full_unstemmed High mobility in a van der Waals layered antiferromagnetic metal
title_short High mobility in a van der Waals layered antiferromagnetic metal
title_sort high mobility in a van der waals layered antiferromagnetic metal
topic Research Articles
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7007265/
https://www.ncbi.nlm.nih.gov/pubmed/32083184
http://dx.doi.org/10.1126/sciadv.aay6407
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