Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry

Photoluminescence (PL) was used to estimate the concentration of carbon in GaN grown by hydride vapor phase epitaxy (HVPE). The PL data were compared with profiles of the impurities obtained from secondary ion mass spectrometry (SIMS) measurements. Comparison of PL and SIMS data has revealed that ap...

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Detalles Bibliográficos
Autores principales: Reshchikov, M. A., Vorobiov, M., Andrieiev, O., Ding, K., Izyumskaya, N., Avrutin, V., Usikov, A., Helava, H., Makarov, Yu.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7010669/
https://www.ncbi.nlm.nih.gov/pubmed/32041980
http://dx.doi.org/10.1038/s41598-020-59033-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7010669/
https://www.ncbi.nlm.nih.gov/pubmed/32041980
http://dx.doi.org/10.1038/s41598-020-59033-z

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