Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN

The effect of unintentionally doped hydrogen on the properties of Mg-doped p-GaN samples grown via metal-organic chemical vapor deposition (MOCVD) is investigated through room temperature photoluminescence (PL) and Hall and secondary ion mass spectroscopy (SIMS) measurements. It is found that there...

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Detalles Bibliográficos
Autores principales: Zhang, Yuheng, Liang, Feng, Zhao, Degang, Jiang, Desheng, Liu, Zongshun, Zhu, Jianjun, Yang, Jing, Liu, Shuangtao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7010866/
https://www.ncbi.nlm.nih.gov/pubmed/32040646
http://dx.doi.org/10.1186/s11671-020-3263-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7010866/
https://www.ncbi.nlm.nih.gov/pubmed/32040646
http://dx.doi.org/10.1186/s11671-020-3263-9

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