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Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN
The effect of unintentionally doped hydrogen on the properties of Mg-doped p-GaN samples grown via metal-organic chemical vapor deposition (MOCVD) is investigated through room temperature photoluminescence (PL) and Hall and secondary ion mass spectroscopy (SIMS) measurements. It is found that there...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7010866/ https://www.ncbi.nlm.nih.gov/pubmed/32040646 http://dx.doi.org/10.1186/s11671-020-3263-9 |