Effect of the Niobium-Doped Titanium Oxide Thickness and Thermal Oxide Layer for Silicon Quantum Dot Solar Cells as a Dopant-Blocking Layer

Silicon quantum dot (Si-QD) embedded in amorphous silicon oxide is used for p-i-n solar cell on quartz substrate as a photogeneration layer. To suppress diffusion of phosphorus from an n-type layer to a Si-QD photogeneration layer, niobium-doped titanium oxide (TiO(x):Nb) is adopted. Hydrofluoric ac...

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Detalles Bibliográficos
Autores principales: Akaishi, Ryushiro, Kitazawa, Kohei, Gotoh, Kazuhiro, Kato, Shinya, Usami, Noritaka, Kurokawa, Yasuyoshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7010877/
https://www.ncbi.nlm.nih.gov/pubmed/32040622
http://dx.doi.org/10.1186/s11671-020-3272-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7010877/
https://www.ncbi.nlm.nih.gov/pubmed/32040622
http://dx.doi.org/10.1186/s11671-020-3272-8

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