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Solution Processable CrN Thin Films: Thickness-Dependent Electrical Transport Properties

Thickness is a very important parameter with which to control the microstructures, along with physical properties in transition-metal nitride thin films. In work presented here, CrN films with different thicknesses (from 26 to 130 nm) were grown by chemical solution deposition. The films are pure ph...

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Autores principales: Hui, Zhenzhen, Zuo, Xuzhong, Ye, Longqiang, Wang, Xuchun, Zhu, Xuebin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7013761/
https://www.ncbi.nlm.nih.gov/pubmed/31963182
http://dx.doi.org/10.3390/ma13020417
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author Hui, Zhenzhen
Zuo, Xuzhong
Ye, Longqiang
Wang, Xuchun
Zhu, Xuebin
author_facet Hui, Zhenzhen
Zuo, Xuzhong
Ye, Longqiang
Wang, Xuchun
Zhu, Xuebin
author_sort Hui, Zhenzhen
collection PubMed
description Thickness is a very important parameter with which to control the microstructures, along with physical properties in transition-metal nitride thin films. In work presented here, CrN films with different thicknesses (from 26 to 130 nm) were grown by chemical solution deposition. The films are pure phase and polycrystalline. Thickness dependence of microstructures and electrical transport behavior were studied. With the increase of films thickness, grain size and nitrogen content are increased, while resistivity, zero-field sensitivity and magnetoresistance are decreased. In the temperature range of 5–350 K, all samples exhibited semiconductor-like properties with dρ/dT < 0. For the range above and below the Néel temperature, the resistivity can be fitted by the thermal activation model and the two-dimensional weak localization (2D-WL) model, respectively. The ultra-low magnetoresistance at a low temperature under high magnetic fields with a large zero-field sensitivity was observed in the CrN thin films. The zero-field sensitivity can be effectively tuned to 10(−2) K(−1) at 5 K with a magnetoresistance of less than 1% at 2 K under 14 T by reasonably controlling the thickness.
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spelling pubmed-70137612020-03-09 Solution Processable CrN Thin Films: Thickness-Dependent Electrical Transport Properties Hui, Zhenzhen Zuo, Xuzhong Ye, Longqiang Wang, Xuchun Zhu, Xuebin Materials (Basel) Article Thickness is a very important parameter with which to control the microstructures, along with physical properties in transition-metal nitride thin films. In work presented here, CrN films with different thicknesses (from 26 to 130 nm) were grown by chemical solution deposition. The films are pure phase and polycrystalline. Thickness dependence of microstructures and electrical transport behavior were studied. With the increase of films thickness, grain size and nitrogen content are increased, while resistivity, zero-field sensitivity and magnetoresistance are decreased. In the temperature range of 5–350 K, all samples exhibited semiconductor-like properties with dρ/dT < 0. For the range above and below the Néel temperature, the resistivity can be fitted by the thermal activation model and the two-dimensional weak localization (2D-WL) model, respectively. The ultra-low magnetoresistance at a low temperature under high magnetic fields with a large zero-field sensitivity was observed in the CrN thin films. The zero-field sensitivity can be effectively tuned to 10(−2) K(−1) at 5 K with a magnetoresistance of less than 1% at 2 K under 14 T by reasonably controlling the thickness. MDPI 2020-01-16 /pmc/articles/PMC7013761/ /pubmed/31963182 http://dx.doi.org/10.3390/ma13020417 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Hui, Zhenzhen
Zuo, Xuzhong
Ye, Longqiang
Wang, Xuchun
Zhu, Xuebin
Solution Processable CrN Thin Films: Thickness-Dependent Electrical Transport Properties
title Solution Processable CrN Thin Films: Thickness-Dependent Electrical Transport Properties
title_full Solution Processable CrN Thin Films: Thickness-Dependent Electrical Transport Properties
title_fullStr Solution Processable CrN Thin Films: Thickness-Dependent Electrical Transport Properties
title_full_unstemmed Solution Processable CrN Thin Films: Thickness-Dependent Electrical Transport Properties
title_short Solution Processable CrN Thin Films: Thickness-Dependent Electrical Transport Properties
title_sort solution processable crn thin films: thickness-dependent electrical transport properties
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7013761/
https://www.ncbi.nlm.nih.gov/pubmed/31963182
http://dx.doi.org/10.3390/ma13020417
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