Planar Hall effect and anisotropic magnetoresistance in polar-polar interface of LaVO(3)-KTaO(3) with strong spin-orbit coupling

Among the perovskite oxide family, KTaO(3) (KTO) has recently attracted considerable interest as a possible system for the realization of the Rashba effect. In this work, we report a novel conducting interface by placing KTO with another insulator, LaVO(3) (LVO) and report planar Hall effect (PHE) and anisotropic magnetoresistance (AMR) measurements. This interface exhibits a signature of strong spin-orbit coupling. Our experimental observations of two fold AMR and PHE at low magnetic fields (B) is similar to those obtained for topological systems and can be intuitively understood using a phenomenological theory for a Rashba spin-split system. Our experimental data show a B(2) dependence of AMR and PHE at low magnetic fields that could also be explained based on our model. At high fields (~8 T), we see a two fold to four fold transition in the AMR that could not be explained using only Rashba spin-split energy spectra.