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SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices

von Neumann architecture based computers isolate computation and storage (i.e. data is shuttled between computation blocks (processor) and memory blocks). The to-and-fro movement of data leads to a fundamental limitation of modern computers, known as the Memory wall. Logic in-Memory (LIM)/In-Memory...

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Autores principales: Kingra, Sandeep Kaur, Parmar, Vivek, Chang, Che-Chia, Hudec, Boris, Hou, Tuo-Hung, Suri, Manan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7018944/
https://www.ncbi.nlm.nih.gov/pubmed/32054872
http://dx.doi.org/10.1038/s41598-020-59121-0
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author Kingra, Sandeep Kaur
Parmar, Vivek
Chang, Che-Chia
Hudec, Boris
Hou, Tuo-Hung
Suri, Manan
author_facet Kingra, Sandeep Kaur
Parmar, Vivek
Chang, Che-Chia
Hudec, Boris
Hou, Tuo-Hung
Suri, Manan
author_sort Kingra, Sandeep Kaur
collection PubMed
description von Neumann architecture based computers isolate computation and storage (i.e. data is shuttled between computation blocks (processor) and memory blocks). The to-and-fro movement of data leads to a fundamental limitation of modern computers, known as the Memory wall. Logic in-Memory (LIM)/In-Memory Computing (IMC) approaches aim to address this bottleneck by directly computing inside memory units thereby eliminating energy-intensive and time-consuming data movement. Several recent works in literature, propose realization of logic function(s) directly using arrays of emerging resistive memory devices (example- memristors, RRAM/ReRAM, PCM, CBRAM, OxRAM, STT-MRAM etc.), rather than using conventional transistors for computing. The logic/embedded-side of digital systems (like processors, micro-controllers) can greatly benefit from such LIM realizations. However, the pure storage-side of digital systems (example SSDs, enterprise storage etc.) will not benefit much from such LIM approaches as when memory arrays are used for logic they lose their core functionality of storage. Thus, there is the need for an approach complementary to existing LIM techniques, that’s more beneficial for the storage-side of digital systems; one that gives compute capability to memory arrays not at the cost of their existing stored states. Fundamentally, this would require memory nanodevice arrays that are capable of storing and computing simultaneously. In this paper, we propose a novel ‘Simultaneous Logic in-Memory’ (SLIM) methodology which is complementary to existing LIM approaches in literature. Through extensive experiments we demonstrate novel SLIM bitcells (1T-1R/2T-1R) comprising non-filamentary bilayer analog OxRAM devices with NMOS transistors. Proposed bitcells are capable of implementing both Memory and Logic operations simultaneously. Detailed programming scheme, array level implementation, and controller architecture are also proposed. Furthermore, to study the impact of proposed SLIM approach for real-world implementations, we performed analysis for two applications: (i) Sobel Edge Detection, and (ii) Binary Neural Network- Multi layer Perceptron (BNN-MLP). By performing all computations in SLIM bitcell array, huge Energy Delay Product (EDP) savings of ≈75× for 1T-1R (≈40× for 2T-1R) SLIM bitcell were observed for edge-detection application while EDP savings of ≈3.5× for 1T-1R (≈1.6× for 2T-1R) SLIM bitcell were observed for BNN-MLP application respectively, in comparison to conventional computing. EDP savings owing to reduction in data transfer between CPU ↔ memory is observed to be ≈780× (for both SLIM bitcells).
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spelling pubmed-70189442020-02-21 SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices Kingra, Sandeep Kaur Parmar, Vivek Chang, Che-Chia Hudec, Boris Hou, Tuo-Hung Suri, Manan Sci Rep Article von Neumann architecture based computers isolate computation and storage (i.e. data is shuttled between computation blocks (processor) and memory blocks). The to-and-fro movement of data leads to a fundamental limitation of modern computers, known as the Memory wall. Logic in-Memory (LIM)/In-Memory Computing (IMC) approaches aim to address this bottleneck by directly computing inside memory units thereby eliminating energy-intensive and time-consuming data movement. Several recent works in literature, propose realization of logic function(s) directly using arrays of emerging resistive memory devices (example- memristors, RRAM/ReRAM, PCM, CBRAM, OxRAM, STT-MRAM etc.), rather than using conventional transistors for computing. The logic/embedded-side of digital systems (like processors, micro-controllers) can greatly benefit from such LIM realizations. However, the pure storage-side of digital systems (example SSDs, enterprise storage etc.) will not benefit much from such LIM approaches as when memory arrays are used for logic they lose their core functionality of storage. Thus, there is the need for an approach complementary to existing LIM techniques, that’s more beneficial for the storage-side of digital systems; one that gives compute capability to memory arrays not at the cost of their existing stored states. Fundamentally, this would require memory nanodevice arrays that are capable of storing and computing simultaneously. In this paper, we propose a novel ‘Simultaneous Logic in-Memory’ (SLIM) methodology which is complementary to existing LIM approaches in literature. Through extensive experiments we demonstrate novel SLIM bitcells (1T-1R/2T-1R) comprising non-filamentary bilayer analog OxRAM devices with NMOS transistors. Proposed bitcells are capable of implementing both Memory and Logic operations simultaneously. Detailed programming scheme, array level implementation, and controller architecture are also proposed. Furthermore, to study the impact of proposed SLIM approach for real-world implementations, we performed analysis for two applications: (i) Sobel Edge Detection, and (ii) Binary Neural Network- Multi layer Perceptron (BNN-MLP). By performing all computations in SLIM bitcell array, huge Energy Delay Product (EDP) savings of ≈75× for 1T-1R (≈40× for 2T-1R) SLIM bitcell were observed for edge-detection application while EDP savings of ≈3.5× for 1T-1R (≈1.6× for 2T-1R) SLIM bitcell were observed for BNN-MLP application respectively, in comparison to conventional computing. EDP savings owing to reduction in data transfer between CPU ↔ memory is observed to be ≈780× (for both SLIM bitcells). Nature Publishing Group UK 2020-02-13 /pmc/articles/PMC7018944/ /pubmed/32054872 http://dx.doi.org/10.1038/s41598-020-59121-0 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Kingra, Sandeep Kaur
Parmar, Vivek
Chang, Che-Chia
Hudec, Boris
Hou, Tuo-Hung
Suri, Manan
SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices
title SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices
title_full SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices
title_fullStr SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices
title_full_unstemmed SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices
title_short SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices
title_sort slim: simultaneous logic-in-memory computing exploiting bilayer analog oxram devices
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7018944/
https://www.ncbi.nlm.nih.gov/pubmed/32054872
http://dx.doi.org/10.1038/s41598-020-59121-0
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