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Compensation of Hysteresis in the Piezoelectric Nanopositioning Stage under Reciprocating Linear Voltage Based on a Mark-Segmented PI Model

The nanopositioning stage with a piezoelectric driver usually compensates for the nonlinear outer-loop hysteresis characteristic of the piezoelectric effect using the Prandtl–Ishlinskii (PI) model under a single-ring linear voltage, but cannot accurately describe the characteristics of the inner-loo...

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Autores principales: An, Dong, Yang, Yixiao, Xu, Ying, Shao, Meng, Shi, Jinyang, Yue, Guodong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7019321/
https://www.ncbi.nlm.nih.gov/pubmed/31861513
http://dx.doi.org/10.3390/mi11010009
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author An, Dong
Yang, Yixiao
Xu, Ying
Shao, Meng
Shi, Jinyang
Yue, Guodong
author_facet An, Dong
Yang, Yixiao
Xu, Ying
Shao, Meng
Shi, Jinyang
Yue, Guodong
author_sort An, Dong
collection PubMed
description The nanopositioning stage with a piezoelectric driver usually compensates for the nonlinear outer-loop hysteresis characteristic of the piezoelectric effect using the Prandtl–Ishlinskii (PI) model under a single-ring linear voltage, but cannot accurately describe the characteristics of the inner-loop hysteresis under the reciprocating linear voltage. In order to improve the accuracy of the nanopositioning, this study designs a nanopositioning stage with a double-parallel guiding mechanism. On the basis of the classical PI model, the study firstly identifies the hysteresis rate tangent slope mark points, then segments and finally proposes a phenomenological model—the mark-segmented Prandtl–Ishlinskii (MSPI) model. The MSPI model, which is fitted together by each segment, can further improve the fitting accuracy of the outer-loop hysteresis nonlinearity, while describing the inner-loop hysteresis nonlinearity perfectly. The experimental results of the inverse model compensation control show that the MSPI model can achieve 99.6% reciprocating linear voltage inner-loop characteristic accuracy. Compared with the classical PI model, the 81.6% accuracy of the hysteresis loop outer loop is improved.
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spelling pubmed-70193212020-03-09 Compensation of Hysteresis in the Piezoelectric Nanopositioning Stage under Reciprocating Linear Voltage Based on a Mark-Segmented PI Model An, Dong Yang, Yixiao Xu, Ying Shao, Meng Shi, Jinyang Yue, Guodong Micromachines (Basel) Article The nanopositioning stage with a piezoelectric driver usually compensates for the nonlinear outer-loop hysteresis characteristic of the piezoelectric effect using the Prandtl–Ishlinskii (PI) model under a single-ring linear voltage, but cannot accurately describe the characteristics of the inner-loop hysteresis under the reciprocating linear voltage. In order to improve the accuracy of the nanopositioning, this study designs a nanopositioning stage with a double-parallel guiding mechanism. On the basis of the classical PI model, the study firstly identifies the hysteresis rate tangent slope mark points, then segments and finally proposes a phenomenological model—the mark-segmented Prandtl–Ishlinskii (MSPI) model. The MSPI model, which is fitted together by each segment, can further improve the fitting accuracy of the outer-loop hysteresis nonlinearity, while describing the inner-loop hysteresis nonlinearity perfectly. The experimental results of the inverse model compensation control show that the MSPI model can achieve 99.6% reciprocating linear voltage inner-loop characteristic accuracy. Compared with the classical PI model, the 81.6% accuracy of the hysteresis loop outer loop is improved. MDPI 2019-12-19 /pmc/articles/PMC7019321/ /pubmed/31861513 http://dx.doi.org/10.3390/mi11010009 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
An, Dong
Yang, Yixiao
Xu, Ying
Shao, Meng
Shi, Jinyang
Yue, Guodong
Compensation of Hysteresis in the Piezoelectric Nanopositioning Stage under Reciprocating Linear Voltage Based on a Mark-Segmented PI Model
title Compensation of Hysteresis in the Piezoelectric Nanopositioning Stage under Reciprocating Linear Voltage Based on a Mark-Segmented PI Model
title_full Compensation of Hysteresis in the Piezoelectric Nanopositioning Stage under Reciprocating Linear Voltage Based on a Mark-Segmented PI Model
title_fullStr Compensation of Hysteresis in the Piezoelectric Nanopositioning Stage under Reciprocating Linear Voltage Based on a Mark-Segmented PI Model
title_full_unstemmed Compensation of Hysteresis in the Piezoelectric Nanopositioning Stage under Reciprocating Linear Voltage Based on a Mark-Segmented PI Model
title_short Compensation of Hysteresis in the Piezoelectric Nanopositioning Stage under Reciprocating Linear Voltage Based on a Mark-Segmented PI Model
title_sort compensation of hysteresis in the piezoelectric nanopositioning stage under reciprocating linear voltage based on a mark-segmented pi model
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7019321/
https://www.ncbi.nlm.nih.gov/pubmed/31861513
http://dx.doi.org/10.3390/mi11010009
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