Cargando…
Role of a 193 nm ArF Excimer Laser in Laser-Assisted Plasma-Enhanced Chemical Vapor Deposition of SiN(x) for Low Temperature Thin Film Encapsulation
In this study, silicon nitride thin films are deposited on organic polyethylene-naphthalate (PEN) substrates by laser assisted plasma enhanced chemical vapor deposition (LAPECVD) at a low temperature (150 °C) for the purpose of evaluating the encapsulation performance. A plasma generator is placed a...
Autores principales: | An, Kunsik, Lee, Ho-Nyun, Cho, Kwan Hyun, Lee, Seung-Woo, Hwang, David J., Kang, Kyung-Tae |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7019693/ https://www.ncbi.nlm.nih.gov/pubmed/31941056 http://dx.doi.org/10.3390/mi11010088 |
Ejemplares similares
-
Evaluating the efficacy of Nd:YAG fourth harmonic (266 nm) in comparison with ArF excimer (193 nm) in laser corneal reshaping: ex vivo pilot study
por: Abdelhalim, Ibrahim, et al.
Publicado: (2023) -
Fabrication of Superhydrophobic Silicone Rubber with Periodic Micro/Nano-Suction Cup Structure by ArF Excimer Laser-Induced Photodissociation
por: Okoshi, Masayuki
Publicado: (2019) -
Treatment of Laser Therapy-Induced Punctate Leukoderma Using a 308-nm Excimer Laser
por: Jung, Han Mi, et al.
Publicado: (2017) -
Hypopigmented Mycosis Fungoides Treated with 308 nm Excimer Laser
por: Yang, Min-Young, et al.
Publicado: (2018) -
Excimer lasers
por: Rhodes, Charles K
Publicado: (1979)