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Temperature-Dependent Growth Characteristics of Nb- and CoFe-Based Nanostructures by Direct-Write Using Focused Electron Beam-Induced Deposition

Focused electron and ion beam-induced deposition (FEBID/FIBID) are direct-write techniques with particular advantages in three-dimensional (3D) fabrication of ferromagnetic or superconducting nanostructures. Recently, two novel precursors, HCo [Formula: see text] Fe(CO) [Formula: see text] and Nb(NM...

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Detalles Bibliográficos
Autores principales: Huth, Michael, Porrati, Fabrizio, Gruszka, Peter, Barth, Sven
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7019710/
https://www.ncbi.nlm.nih.gov/pubmed/31881650
http://dx.doi.org/10.3390/mi11010028
Descripción
Sumario:Focused electron and ion beam-induced deposition (FEBID/FIBID) are direct-write techniques with particular advantages in three-dimensional (3D) fabrication of ferromagnetic or superconducting nanostructures. Recently, two novel precursors, HCo [Formula: see text] Fe(CO) [Formula: see text] and Nb(NMe [Formula: see text]) [Formula: see text] (N-t-Bu), were introduced, resulting in fully metallic CoFe ferromagnetic alloys by FEBID and superconducting NbC by FIBID, respectively. In order to properly define the writing strategy for the fabrication of 3D structures using these precursors, their temperature-dependent average residence time on the substrate and growing deposit needs to be known. This is a prerequisite for employing the simulation-guided 3D computer aided design (CAD) approach to FEBID/FIBID, which was introduced recently. We fabricated a series of rectangular-shaped deposits by FEBID at different substrate temperatures between 5 [Formula: see text] C and 24 [Formula: see text] C using the precursors and extracted the activation energy for precursor desorption and the pre-exponential factor from the measured heights of the deposits using the continuum growth model of FEBID based on the reaction-diffusion equation for the adsorbed precursor.