Low-Concentration Ammonia Gas Sensors Manufactured Using the CMOS–MEMS Technique

This study describes the fabrication of an ammonia gas sensor (AGS) using a complementary metal oxide semiconductor (CMOS)–microelectromechanical system (MEMS) technique. The structure of the AGS features interdigitated electrodes (IDEs) and a sensing material on a silicon substrate. The IDEs are th...

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Detalles Bibliográficos
Autores principales: Shen, Wei-Chun, Shih, Po-Jen, Tsai, Yao-Chuan, Hsu, Cheng-Chih, Dai, Ching-Liang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7019987/
https://www.ncbi.nlm.nih.gov/pubmed/31952151
http://dx.doi.org/10.3390/mi11010092

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7019987/
https://www.ncbi.nlm.nih.gov/pubmed/31952151
http://dx.doi.org/10.3390/mi11010092

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