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Physical-Based Simulation of the GaN-Based Grooved-Anode Planar Gunn Diode
In this paper, a novel gallium nitride (GaN)-based heterostructure Gunn diode is proposed for the first time to enhance the output characteristics of Gunn oscillation waveforms. A well-designed grooved anode contact is adopted to separate the long-channel diode into two short-channel diodes in paral...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7020149/ https://www.ncbi.nlm.nih.gov/pubmed/31963240 http://dx.doi.org/10.3390/mi11010097 |
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author | Wang, Ying Li, Liu-An Ao, Jin-Ping Hao, Yue |
author_facet | Wang, Ying Li, Liu-An Ao, Jin-Ping Hao, Yue |
author_sort | Wang, Ying |
collection | PubMed |
description | In this paper, a novel gallium nitride (GaN)-based heterostructure Gunn diode is proposed for the first time to enhance the output characteristics of Gunn oscillation waveforms. A well-designed grooved anode contact is adopted to separate the long-channel diode into two short-channel diodes in parallel. If the grooved anode contact is positioned in the middle of the device, the output power nearly doubles in the grooved-anode diode compared with the single-channel ones, as does the output frequency. Based on the numerical results, the best output characteristics are obtained at the 2.0-µm symmetrical grooved-anode diode, which produces nearly 5.48 mW of power at the fundamental frequency of 172.81 GHz, with 3.13% efficiency of power conversion. If the grooved anode contact is not positioned in the middle of the diode, the harmonic frequency would be enhanced. The GaN heterostructure grooved-anode Gunn diode has been demonstrated to be an excellent solid-state source of terahertz oscillator. |
format | Online Article Text |
id | pubmed-7020149 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-70201492020-03-09 Physical-Based Simulation of the GaN-Based Grooved-Anode Planar Gunn Diode Wang, Ying Li, Liu-An Ao, Jin-Ping Hao, Yue Micromachines (Basel) Article In this paper, a novel gallium nitride (GaN)-based heterostructure Gunn diode is proposed for the first time to enhance the output characteristics of Gunn oscillation waveforms. A well-designed grooved anode contact is adopted to separate the long-channel diode into two short-channel diodes in parallel. If the grooved anode contact is positioned in the middle of the device, the output power nearly doubles in the grooved-anode diode compared with the single-channel ones, as does the output frequency. Based on the numerical results, the best output characteristics are obtained at the 2.0-µm symmetrical grooved-anode diode, which produces nearly 5.48 mW of power at the fundamental frequency of 172.81 GHz, with 3.13% efficiency of power conversion. If the grooved anode contact is not positioned in the middle of the diode, the harmonic frequency would be enhanced. The GaN heterostructure grooved-anode Gunn diode has been demonstrated to be an excellent solid-state source of terahertz oscillator. MDPI 2020-01-16 /pmc/articles/PMC7020149/ /pubmed/31963240 http://dx.doi.org/10.3390/mi11010097 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Wang, Ying Li, Liu-An Ao, Jin-Ping Hao, Yue Physical-Based Simulation of the GaN-Based Grooved-Anode Planar Gunn Diode |
title | Physical-Based Simulation of the GaN-Based Grooved-Anode Planar Gunn Diode |
title_full | Physical-Based Simulation of the GaN-Based Grooved-Anode Planar Gunn Diode |
title_fullStr | Physical-Based Simulation of the GaN-Based Grooved-Anode Planar Gunn Diode |
title_full_unstemmed | Physical-Based Simulation of the GaN-Based Grooved-Anode Planar Gunn Diode |
title_short | Physical-Based Simulation of the GaN-Based Grooved-Anode Planar Gunn Diode |
title_sort | physical-based simulation of the gan-based grooved-anode planar gunn diode |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7020149/ https://www.ncbi.nlm.nih.gov/pubmed/31963240 http://dx.doi.org/10.3390/mi11010097 |
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