Calculations of Some Doping Nanostructurations and Patterns Improving the Functionality of High-Temperature Superconductors for Bolometer Device Applications

We calculate the effects of doping nanostructuration and the patterning of thin films of high-temperature superconductors (HTS) with the aim of optimizing their functionality as sensing materials for resistive transition-edge bolometer devices (TES). We focus, in particular, on spatial variations of the carrier doping into the CuO [Formula: see text] layers due to oxygen off-stoichiometry, (that induce, in turn, critical temperature variations) and explore following two major cases of such structurations: First, the random nanoscale disorder intrinsically associated to doping levels that do not maximize the superconducting critical temperature; our studies suggest that this first simple structuration already improves some of the bolometric operational parameters with respect to the conventional, nonstructured HTS materials used until now. Secondly, we consider the imposition of regular arrangements of zones with different nominal doping levels (patterning); we find that such regular patterns may improve the bolometer performance even further. We find one design that improves, with respect to nonstructured HTS materials, both the saturation power and the operating temperature width by more than one order of magnitude. It also almost doubles the response of the sensor to radiation.