Room temperature in-situ measurement of the spin voltage of a BiSbTe(3) thin film

One of the hallmarks of topological insulators (TIs), the intrinsic spin polarisation in the topologically protected surface states, is investigated at room temperature in-situ by means of four-probe scanning tunnelling microscopy (STM) for a BiSbTe(3) thin film. To achieve the required precision of...

Descripción completa

Detalles Bibliográficos
Autores principales: Leis, Arthur, Schleenvoigt, Michael, Jalil, Abdur Rehman, Cherepanov, Vasily, Mussler, Gregor, Grützmacher, Detlev, Tautz, F. Stefan, Voigtländer, Bert
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7029040/
https://www.ncbi.nlm.nih.gov/pubmed/32071388
http://dx.doi.org/10.1038/s41598-020-59679-9
Descripción
Sumario:One of the hallmarks of topological insulators (TIs), the intrinsic spin polarisation in the topologically protected surface states, is investigated at room temperature in-situ by means of four-probe scanning tunnelling microscopy (STM) for a BiSbTe(3) thin film. To achieve the required precision of tip positions for measuring a spin signal, a precise positioning method employing STM scans of the local topography with each individual tip is demonstrated. From the transport measurements, the spin polarisation in the topological surface states (TSS) is estimated as p ~ 0.3 – 0.6, which is close to the theoretical limit.

Ejemplares similares