Cargando…
Room temperature in-situ measurement of the spin voltage of a BiSbTe(3) thin film
One of the hallmarks of topological insulators (TIs), the intrinsic spin polarisation in the topologically protected surface states, is investigated at room temperature in-situ by means of four-probe scanning tunnelling microscopy (STM) for a BiSbTe(3) thin film. To achieve the required precision of...
Autores principales: | Leis, Arthur, Schleenvoigt, Michael, Jalil, Abdur Rehman, Cherepanov, Vasily, Mussler, Gregor, Grützmacher, Detlev, Tautz, F. Stefan, Voigtländer, Bert |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7029040/ https://www.ncbi.nlm.nih.gov/pubmed/32071388 http://dx.doi.org/10.1038/s41598-020-59679-9 |
Ejemplares similares
-
Enhanced room-temperature thermoelectric performance of p-type BiSbTe by reducing carrier concentration
por: Wei, Zichen, et al.
Publicado: (2019) -
Thermal Stability of P-Type BiSbTe Alloys Prepared by Melt Spinning and Rapid Sintering
por: Zheng, Yun, et al.
Publicado: (2017) -
Selective Area Epitaxy of Quasi-1-Dimensional Topological Nanostructures and Networks
por: Jalil, Abdur Rehman, et al.
Publicado: (2023) -
Band Structure of Topological Insulator BiSbTe(1.25)Se(1.75)
por: Lohani, H., et al.
Publicado: (2017) -
Supercurrent in Bi(4)Te(3) Topological Material-Based Three-Terminal Junctions
por: Kölzer, Jonas, et al.
Publicado: (2023)