Electric-Controlled Valley Pseudomagnetoresistance in Graphene with Y-Shaped Kekulé Lattice Distortion

We propose a new method for regulating valley pseudomagnetoresistance in ballistic graphene-based valley field-effect transistors by taking into account the Y-shaped Kekulé lattice distortion and electric barrier. The device involves valley injection and valley detection by ferromagnetic-strain sour...

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Detalles Bibliográficos
Autores principales: Wu, Qing-Ping, Chang, Lu-Lu, Li, Yu-Zeng, Liu, Zheng-Fang, Xiao, Xian-Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7031462/
https://www.ncbi.nlm.nih.gov/pubmed/32076846
http://dx.doi.org/10.1186/s11671-020-3275-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7031462/
https://www.ncbi.nlm.nih.gov/pubmed/32076846
http://dx.doi.org/10.1186/s11671-020-3275-5

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