High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga(2)O(3) Heterojunction

Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electro...

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Detalles Bibliográficos
Autores principales: Jia, Menghan, Wang, Fang, Tang, Libin, Xiang, Jinzhong, Teng, Kar Seng, Lau, Shu Ping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7036083/
https://www.ncbi.nlm.nih.gov/pubmed/32088767
http://dx.doi.org/10.1186/s11671-020-3271-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7036083/
https://www.ncbi.nlm.nih.gov/pubmed/32088767
http://dx.doi.org/10.1186/s11671-020-3271-9

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