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High-performance silicon−graphene hybrid plasmonic waveguide photodetectors beyond 1.55 μm

Graphene has attracted much attention for the realization of high-speed photodetection for silicon photonics over a wide wavelength range. However, the reported fast graphene photodetectors mainly operate in the 1.55 μm wavelength band. In this work, we propose and realize high-performance waveguide...

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Detalles Bibliográficos
Autores principales: Guo, Jingshu, Li, Jiang, Liu, Chaoyue, Yin, Yanlong, Wang, Wenhui, Ni, Zhenhua, Fu, Zhilei, Yu, Hui, Xu, Yang, Shi, Yaocheng, Ma, Yungui, Gao, Shiming, Tong, Limin, Dai, Daoxin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7048841/
https://www.ncbi.nlm.nih.gov/pubmed/32140220
http://dx.doi.org/10.1038/s41377-020-0263-6
Descripción
Sumario:Graphene has attracted much attention for the realization of high-speed photodetection for silicon photonics over a wide wavelength range. However, the reported fast graphene photodetectors mainly operate in the 1.55 μm wavelength band. In this work, we propose and realize high-performance waveguide photodetectors based on bolometric/photoconductive effects by introducing an ultrathin wide silicon−graphene hybrid plasmonic waveguide, which enables efficient light absorption in graphene at 1.55 μm and beyond. When operating at 2 μm, the present photodetector has a responsivity of ~70 mA/W and a setup-limited 3 dB bandwidth of >20 GHz. When operating at 1.55 μm, the present photodetector also works very well with a broad 3 dB bandwidth of >40 GHz (setup-limited) and a high responsivity of ~0.4 A/W even with a low bias voltage of −0.3 V. This work paves the way for achieving high-responsivity and high-speed silicon–graphene waveguide photodetection in the near/mid-infrared ranges, which has applications in optical communications, nonlinear photonics, and on-chip sensing.