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Sensitive Terahertz Detection and Imaging Driven by the Photothermoelectric Effect in Ultrashort‐Channel Black Phosphorus Devices
Terahertz (THz) photon detection is of particular appealing for myriad applications, but it still lags behind efficient manipulation with electronics and photonics due to the lack of a suitable principle satisfying both high sensitivity and fast response at room temperature. Here, a new strategy is...
Autores principales: | , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
John Wiley and Sons Inc.
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7055554/ https://www.ncbi.nlm.nih.gov/pubmed/32154074 http://dx.doi.org/10.1002/advs.201902699 |
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author | Guo, Wanlong Dong, Zhuo Xu, Yijun Liu, Changlong Wei, Dacheng Zhang, Libo Shi, Xinyao Guo, Cheng Xu, Huang Chen, Gang Wang, Lin Zhang, Kai Chen, Xiaoshuang Lu, Wei |
author_facet | Guo, Wanlong Dong, Zhuo Xu, Yijun Liu, Changlong Wei, Dacheng Zhang, Libo Shi, Xinyao Guo, Cheng Xu, Huang Chen, Gang Wang, Lin Zhang, Kai Chen, Xiaoshuang Lu, Wei |
author_sort | Guo, Wanlong |
collection | PubMed |
description | Terahertz (THz) photon detection is of particular appealing for myriad applications, but it still lags behind efficient manipulation with electronics and photonics due to the lack of a suitable principle satisfying both high sensitivity and fast response at room temperature. Here, a new strategy is proposed to overcome these limitations by exploring the photothermoelectric (PTE) effect in an ultrashort (down to 30 nm) channel with black phosphorus as a photoactive material. The preferential flow of hot carriers is enabled by the asymmetric Cr/Au and Ti/Au metallization with the titled‐angle evaporation technique. Most intriguingly, orders of magnitude field‐enhancement beyond the skin‐depth limit and photon absorption across a broadband frequency can be achieved. The PTE detector has excellent sensitivity of 297 V W(−1), noise equivalent power less than 58 pW/Hz(0.5), and response time below 0.8 ms, which is superior to other thermal‐based detectors at room temperature. A rigorous comparison with existing THz detectors, together with verification by further optical‐pumping and imaging experiments, substantiates the importance of the localized field effect in the skin‐depth limit. The results allow solid understanding on the role of PTE effect played in the THz photoresponse, opening up new opportunities for developing highly sensitive THz detectors for addressing targeted applications. |
format | Online Article Text |
id | pubmed-7055554 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | John Wiley and Sons Inc. |
record_format | MEDLINE/PubMed |
spelling | pubmed-70555542020-03-09 Sensitive Terahertz Detection and Imaging Driven by the Photothermoelectric Effect in Ultrashort‐Channel Black Phosphorus Devices Guo, Wanlong Dong, Zhuo Xu, Yijun Liu, Changlong Wei, Dacheng Zhang, Libo Shi, Xinyao Guo, Cheng Xu, Huang Chen, Gang Wang, Lin Zhang, Kai Chen, Xiaoshuang Lu, Wei Adv Sci (Weinh) Communications Terahertz (THz) photon detection is of particular appealing for myriad applications, but it still lags behind efficient manipulation with electronics and photonics due to the lack of a suitable principle satisfying both high sensitivity and fast response at room temperature. Here, a new strategy is proposed to overcome these limitations by exploring the photothermoelectric (PTE) effect in an ultrashort (down to 30 nm) channel with black phosphorus as a photoactive material. The preferential flow of hot carriers is enabled by the asymmetric Cr/Au and Ti/Au metallization with the titled‐angle evaporation technique. Most intriguingly, orders of magnitude field‐enhancement beyond the skin‐depth limit and photon absorption across a broadband frequency can be achieved. The PTE detector has excellent sensitivity of 297 V W(−1), noise equivalent power less than 58 pW/Hz(0.5), and response time below 0.8 ms, which is superior to other thermal‐based detectors at room temperature. A rigorous comparison with existing THz detectors, together with verification by further optical‐pumping and imaging experiments, substantiates the importance of the localized field effect in the skin‐depth limit. The results allow solid understanding on the role of PTE effect played in the THz photoresponse, opening up new opportunities for developing highly sensitive THz detectors for addressing targeted applications. John Wiley and Sons Inc. 2020-01-19 /pmc/articles/PMC7055554/ /pubmed/32154074 http://dx.doi.org/10.1002/advs.201902699 Text en © 2020 The Authors. Published by WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Communications Guo, Wanlong Dong, Zhuo Xu, Yijun Liu, Changlong Wei, Dacheng Zhang, Libo Shi, Xinyao Guo, Cheng Xu, Huang Chen, Gang Wang, Lin Zhang, Kai Chen, Xiaoshuang Lu, Wei Sensitive Terahertz Detection and Imaging Driven by the Photothermoelectric Effect in Ultrashort‐Channel Black Phosphorus Devices |
title | Sensitive Terahertz Detection and Imaging Driven by the Photothermoelectric Effect in Ultrashort‐Channel Black Phosphorus Devices |
title_full | Sensitive Terahertz Detection and Imaging Driven by the Photothermoelectric Effect in Ultrashort‐Channel Black Phosphorus Devices |
title_fullStr | Sensitive Terahertz Detection and Imaging Driven by the Photothermoelectric Effect in Ultrashort‐Channel Black Phosphorus Devices |
title_full_unstemmed | Sensitive Terahertz Detection and Imaging Driven by the Photothermoelectric Effect in Ultrashort‐Channel Black Phosphorus Devices |
title_short | Sensitive Terahertz Detection and Imaging Driven by the Photothermoelectric Effect in Ultrashort‐Channel Black Phosphorus Devices |
title_sort | sensitive terahertz detection and imaging driven by the photothermoelectric effect in ultrashort‐channel black phosphorus devices |
topic | Communications |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7055554/ https://www.ncbi.nlm.nih.gov/pubmed/32154074 http://dx.doi.org/10.1002/advs.201902699 |
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