Mechanically controllable nonlinear dielectrics

Strain-sensitive Ba(x)Sr(1−x)TiO(3) perovskite systems are widely used because of their superior nonlinear dielectric behaviors. In this research, new heterostructures including paraelectric Ba(0.5)Sr(0.5)TiO(3) (BSTO) and ferroelectric BaTiO(3) (BTO) materials were epitaxially fabricated on flexibl...

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Detalles Bibliográficos
Autores principales: Ko, D. L., Tsai, M. F., Chen, J. W., Shao, P. W., Tan, Y. Z., Wang, J. J., Ho, S. Z., Lai, Y. H., Chueh, Y. L., Chen, Y. C., Tsai, D. P., Chen, L.-Q., Chu, Y. H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2020
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7060063/
https://www.ncbi.nlm.nih.gov/pubmed/32181365
http://dx.doi.org/10.1126/sciadv.aaz3180
Descripción
Sumario:Strain-sensitive Ba(x)Sr(1−x)TiO(3) perovskite systems are widely used because of their superior nonlinear dielectric behaviors. In this research, new heterostructures including paraelectric Ba(0.5)Sr(0.5)TiO(3) (BSTO) and ferroelectric BaTiO(3) (BTO) materials were epitaxially fabricated on flexible muscovite substrate. Through simple bending, the application of mechanical force can regulate the dielectric constant of BSTO from −77 to 36% and the channel current of BTO-based ferroelectric field effect transistor by two orders. The detailed mechanism was studied through the exploration of phase transition and determination of band structure. In addition, the phase-field simulations were implemented to provide theoretical support. This research opens a new avenue for mechanically controllable components based on high-quality oxide heteroepitaxy.

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