Exchange bias and quantum anomalous nomalous Hall effect in the MnBi(2)Te(4)/CrI(3) heterostructure

The layered antiferromagnetic MnBi(2)Te(4) films have been proposed to be an intrinsic quantum anomalous Hall (QAH) insulator with a large gap. It is crucial to open a magnetic gap of surface states. However, recent experiments have observed gapless surface states, indicating the absence of out-of-plane surface magnetism, and thus, the quantized Hall resistance can only be achieved at the magnetic field above 6 T. We propose to induce out-of-plane surface magnetism of MnBi(2)Te(4) films via the magnetic proximity with magnetic insulator CrI(3). A strong exchange bias of ∼40 meV originates from the long Cr-e(g) orbital tails that hybridize strongly with Te p orbitals. By stabilizing surface magnetism, the QAH effect can be realized in the MnBi(2)Te(4)/CrI(3) heterostructure. Moreover, the high–Chern number QAH state can be achieved by controlling external electric gates. Thus, the MnBi(2)Te(4)/CrI(3) heterostructure provides a promising platform to realize the electrically tunable zero-field QAH effect.