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Polarity Inversion of Aluminum Nitride Thin Films by using Si and MgSi Dopants

Polarity is among the critical characteristics that could governs the functionality of piezoelectric materials. In this study, the polarity of aluminum nitride (AlN) thin films was inverted from Al-polar to N-polar by doping Si into AlN in the range of 1–15 at.%. Polarity inversion from Al-polar to...

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Detalles Bibliográficos
Autores principales:	Anggraini, Sri Ayu, Uehara, Masato, Hirata, Kenji, Yamada, Hiroshi, Akiyama, Morito
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2020
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7062775/ https://www.ncbi.nlm.nih.gov/pubmed/32152367 http://dx.doi.org/10.1038/s41598-020-61285-8

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