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Epitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon
Black phosphorus (BP) is a promising two-dimensional layered semiconductor material for next-generation electronics and optoelectronics, with a thickness-dependent tunable direct bandgap and high carrier mobility. Though great research advantages have been achieved on BP, lateral synthesis of high q...
Autores principales: | Xu, Yijun, Shi, Xinyao, Zhang, Yushuang, Zhang, Hongtao, Zhang, Qinglin, Huang, Zengli, Xu, Xiangfan, Guo, Jie, Zhang, Han, Sun, Litao, Zeng, Zhongming, Pan, Anlian, Zhang, Kai |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7067838/ https://www.ncbi.nlm.nih.gov/pubmed/32165616 http://dx.doi.org/10.1038/s41467-020-14902-z |
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