Electrical Re-Writable Non-Volatile Memory Device Based on PEDOT:PSS Thin Film

In this research, we investigate the memory behavior of poly(3,4 ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) cross bar structure memory cells. We demonstrate that Al/PEDOT:PSS/Al cells fabricated elements exhibit a bipolar switching and reproducible behavior via current–voltage, endura...

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Detalles Bibliográficos
Autores principales: Salaoru, Iulia, Pantelidis, Christos Christodoulos
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7074640/
https://www.ncbi.nlm.nih.gov/pubmed/32050693
http://dx.doi.org/10.3390/mi11020182
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author Salaoru, Iulia
Pantelidis, Christos Christodoulos
author_facet Salaoru, Iulia
Pantelidis, Christos Christodoulos
author_sort Salaoru, Iulia
collection PubMed
description In this research, we investigate the memory behavior of poly(3,4 ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) cross bar structure memory cells. We demonstrate that Al/PEDOT:PSS/Al cells fabricated elements exhibit a bipolar switching and reproducible behavior via current–voltage, endurance, and retention time tests. We ascribe the physical origin of the bipolar switching to the change of the electrical conductivity of PEDOT:PSS due to electrical field induced dipolar reorientation.
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spelling pubmed-70746402020-03-20 Electrical Re-Writable Non-Volatile Memory Device Based on PEDOT:PSS Thin Film Salaoru, Iulia Pantelidis, Christos Christodoulos Micromachines (Basel) Article In this research, we investigate the memory behavior of poly(3,4 ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) cross bar structure memory cells. We demonstrate that Al/PEDOT:PSS/Al cells fabricated elements exhibit a bipolar switching and reproducible behavior via current–voltage, endurance, and retention time tests. We ascribe the physical origin of the bipolar switching to the change of the electrical conductivity of PEDOT:PSS due to electrical field induced dipolar reorientation. MDPI 2020-02-10 /pmc/articles/PMC7074640/ /pubmed/32050693 http://dx.doi.org/10.3390/mi11020182 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Salaoru, Iulia
Pantelidis, Christos Christodoulos
Electrical Re-Writable Non-Volatile Memory Device Based on PEDOT:PSS Thin Film
title Electrical Re-Writable Non-Volatile Memory Device Based on PEDOT:PSS Thin Film
title_full Electrical Re-Writable Non-Volatile Memory Device Based on PEDOT:PSS Thin Film
title_fullStr Electrical Re-Writable Non-Volatile Memory Device Based on PEDOT:PSS Thin Film
title_full_unstemmed Electrical Re-Writable Non-Volatile Memory Device Based on PEDOT:PSS Thin Film
title_short Electrical Re-Writable Non-Volatile Memory Device Based on PEDOT:PSS Thin Film
title_sort electrical re-writable non-volatile memory device based on pedot:pss thin film
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7074640/
https://www.ncbi.nlm.nih.gov/pubmed/32050693
http://dx.doi.org/10.3390/mi11020182
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AT pantelidischristoschristodoulos electricalrewritablenonvolatilememorydevicebasedonpedotpssthinfilm

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