Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM

Recently, one-transistor dynamic random-access memory (1T-DRAM) cells having a polysilicon body (poly-Si 1T-DRAM) have attracted attention as candidates to replace conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM). Poly-Si 1T-DRAM enables the cost-effective implemen...

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Detalles Bibliográficos
Autores principales: Kim, Hyeonjeong, Yoo, Songyi, Kang, In-Man, Cho, Seongjae, Sun, Wookyung, Shin, Hyungsoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7074760/
https://www.ncbi.nlm.nih.gov/pubmed/32102235
http://dx.doi.org/10.3390/mi11020228

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7074760/
https://www.ncbi.nlm.nih.gov/pubmed/32102235
http://dx.doi.org/10.3390/mi11020228

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