Defect Structure Determination of GaN Films in GaN/AlN/Si Heterostructures by HR-TEM, XRD, and Slow Positrons Experiments

The present article evaluates, in qualitative and quantitative manners, the characteristics (i.e., thickness of layers, crystal structures, growth orientation, elemental diffusion depths, edge, and screw dislocation densities), within two GaN/AlN/Si heterostructures, that alter their efficiencies as...

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Detalles Bibliográficos
Autores principales: Ene, Vladimir Lucian, Dinescu, Doru, Djourelov, Nikolay, Zai, Iulia, Vasile, Bogdan Stefan, Serban, Andreea Bianca, Leca, Victor, Andronescu, Ecaterina
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7074934/
https://www.ncbi.nlm.nih.gov/pubmed/31979247
http://dx.doi.org/10.3390/nano10020197

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7074934/
https://www.ncbi.nlm.nih.gov/pubmed/31979247
http://dx.doi.org/10.3390/nano10020197

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