MOS Capacitance Measurements for PEALD TiO(2) Dielectric Films Grown under Different Conditions and the Impact of Al(2)O(3) Partial-Monolayer Insertion

In this paper, we report the plasma-enhanced atomic layer deposition (PEALD) of TiO(2) and TiO(2)/Al(2)O(3) nanolaminate films on p-Si(100) to fabricate metal-oxide-semiconductor (MOS) capacitors. In the PEALD process, we used titanium tetraisopropoxide (TTIP) as a titanium precursor, trimethyl alum...

Descripción completa

Detalles Bibliográficos
Autores principales: Chiappim, William, Watanabe, Marcos, Dias, Vanessa, Testoni, Giorgio, Rangel, Ricardo, Fraga, Mariana, Maciel, Homero, dos Santos Filho, Sebastião, Pessoa, Rodrigo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7075208/
https://www.ncbi.nlm.nih.gov/pubmed/32079219
http://dx.doi.org/10.3390/nano10020338

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7075208/
https://www.ncbi.nlm.nih.gov/pubmed/32079219
http://dx.doi.org/10.3390/nano10020338

Ejemplares similares