Fabrication and Evaluation of N-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistors Based on Regrown and Implantation Methods

We have demonstrated the enhancement-mode n-channel gallium nitride (GaN) metal-oxide field-effect transistors (MOSFETs) on homoepitaxial GaN substrates using the selective area regrowth and ion implantation techniques. Both types of MOSFETs perform normally off operations. The GaN-MOSFETs fabricate...

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Detalles Bibliográficos
Autores principales: Nguyen, Huu Trung, Yamada, Hisashi, Yamada, Toshikazu, Takahashi, Tokio, Shimizu, Mitsuaki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7078724/
https://www.ncbi.nlm.nih.gov/pubmed/32085428
http://dx.doi.org/10.3390/ma13040899

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7078724/
https://www.ncbi.nlm.nih.gov/pubmed/32085428
http://dx.doi.org/10.3390/ma13040899

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