Cargando…
Persistent metallic Sn-doped In(2)O(3) epitaxial ultrathin films with enhanced infrared transmittance
Infrared transparent electrodes (IR-TEs) have recently attracted much attention for industrial and military applications. The simplest method to obtain high IR transmittance is to reduce the electrode film thickness. However, for films several tens of nanometres thick, this approach unintentionally...
Autores principales: | Kim, Dongha, Lee, Shinbuhm |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7080801/ https://www.ncbi.nlm.nih.gov/pubmed/32188914 http://dx.doi.org/10.1038/s41598-020-61772-y |
Ejemplares similares
-
Strong conductivity enhancement of La-doped BaSnO(3) transparent films on Al(2)O(3) with the assistance of templated epitaxy for electromagnetic shielding in extreme environments
por: Ha, Youngkyoung, et al.
Publicado: (2023) -
Effects of Sn doping on the morphology and properties of Fe-doped In(2)O(3) epitaxial films
por: Zhou, Tie, et al.
Publicado: (2012) -
Ultrathin-metal-film-based transparent electrodes with relative transmittance surpassing 100%
por: Ji, Chengang, et al.
Publicado: (2020) -
Thickness-Induced Metal-Insulator Transition in Sb-doped SnO(2) Ultrathin Films: The Role of Quantum Confinement
por: Ke, Chang, et al.
Publicado: (2015) -
Plasma Enhanced Complete Oxidation of Ultrathin Epitaxial Praseodymia Films on Si(111)
por: Kuschel, Olga, et al.
Publicado: (2015)