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High dynamic resistance elements based on a Josephson junction array
A chain of superconductor–insulator–superconductor junctions based on Al–AlO(x)–Al nanostructures and fabricated using conventional lift-off lithography techniques was measured at ultra-low temperatures. At zero magnetic field, the low current bias dynamic resistance can reach values of ≈10(11) Ω. I...
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Beilstein-Institut
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7082698/ https://www.ncbi.nlm.nih.gov/pubmed/32215228 http://dx.doi.org/10.3762/bjnano.11.32 |
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author | Arutyunov, Konstantin Yu Lehtinen, Janne Samuel |
author_facet | Arutyunov, Konstantin Yu Lehtinen, Janne Samuel |
author_sort | Arutyunov, Konstantin Yu |
collection | PubMed |
description | A chain of superconductor–insulator–superconductor junctions based on Al–AlO(x)–Al nanostructures and fabricated using conventional lift-off lithography techniques was measured at ultra-low temperatures. At zero magnetic field, the low current bias dynamic resistance can reach values of ≈10(11) Ω. It was demonstrated that the system can provide a decent quality current biasing circuit, enabling the observation of Coulomb blockade and Bloch oscillations in ultra-narrow Ti nanowires associated with the quantum phase-slip effect. |
format | Online Article Text |
id | pubmed-7082698 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | Beilstein-Institut |
record_format | MEDLINE/PubMed |
spelling | pubmed-70826982020-03-25 High dynamic resistance elements based on a Josephson junction array Arutyunov, Konstantin Yu Lehtinen, Janne Samuel Beilstein J Nanotechnol Full Research Paper A chain of superconductor–insulator–superconductor junctions based on Al–AlO(x)–Al nanostructures and fabricated using conventional lift-off lithography techniques was measured at ultra-low temperatures. At zero magnetic field, the low current bias dynamic resistance can reach values of ≈10(11) Ω. It was demonstrated that the system can provide a decent quality current biasing circuit, enabling the observation of Coulomb blockade and Bloch oscillations in ultra-narrow Ti nanowires associated with the quantum phase-slip effect. Beilstein-Institut 2020-03-03 /pmc/articles/PMC7082698/ /pubmed/32215228 http://dx.doi.org/10.3762/bjnano.11.32 Text en Copyright © 2020, Arutyunov and Lehtinen https://creativecommons.org/licenses/by/4.0https://www.beilstein-journals.org/bjnano/termsThis is an Open Access article under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0). Please note that the reuse, redistribution and reproduction in particular requires that the authors and source are credited. The license is subject to the Beilstein Journal of Nanotechnology terms and conditions: (https://www.beilstein-journals.org/bjnano/terms) |
spellingShingle | Full Research Paper Arutyunov, Konstantin Yu Lehtinen, Janne Samuel High dynamic resistance elements based on a Josephson junction array |
title | High dynamic resistance elements based on a Josephson junction array |
title_full | High dynamic resistance elements based on a Josephson junction array |
title_fullStr | High dynamic resistance elements based on a Josephson junction array |
title_full_unstemmed | High dynamic resistance elements based on a Josephson junction array |
title_short | High dynamic resistance elements based on a Josephson junction array |
title_sort | high dynamic resistance elements based on a josephson junction array |
topic | Full Research Paper |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7082698/ https://www.ncbi.nlm.nih.gov/pubmed/32215228 http://dx.doi.org/10.3762/bjnano.11.32 |
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