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Detection of Severe Acute Respiratory Syndrome (SARS) Coronavirus Nucleocapsid Protein Using AlGaN/GaN High Electron Mobility Transistors

AlGaN/GaN high electron mobility transistors (HEMTs) were used to detect the SARS coronavirus (SARS-CoV) nucleocapsid protein interaction without fluorescent labeling. The detection limit in our system was approximately 0.003 nM of protein sample. Our result showed that this technique was more compe...

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Autores principales: Hsu, You-Ren, Lee, Geng-Yen, Chyi, Jen-Inn, Chang, Chung-ke, Huang, Chih-Cheng, Hsu, Chen-Pin, Huang, Tai-huang, Ren, Fan, Wang, Yu-Lin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Electrochemical Society, Inc. 2013
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7095771/
https://www.ncbi.nlm.nih.gov/pubmed/32288936
http://dx.doi.org/10.1149/05006.0239ecst
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author Hsu, You-Ren
Lee, Geng-Yen
Chyi, Jen-Inn
Chang, Chung-ke
Huang, Chih-Cheng
Hsu, Chen-Pin
Huang, Tai-huang
Ren, Fan
Wang, Yu-Lin
author_facet Hsu, You-Ren
Lee, Geng-Yen
Chyi, Jen-Inn
Chang, Chung-ke
Huang, Chih-Cheng
Hsu, Chen-Pin
Huang, Tai-huang
Ren, Fan
Wang, Yu-Lin
author_sort Hsu, You-Ren
collection PubMed
description AlGaN/GaN high electron mobility transistors (HEMTs) were used to detect the SARS coronavirus (SARS-CoV) nucleocapsid protein interaction without fluorescent labeling. The detection limit in our system was approximately 0.003 nM of protein sample. Our result showed that this technique was more competitive than isotope-labeling EMSA. We demonstrated AlGaN/GaN was highly potential in constructing a semiconductor-based-sensor binding assay to extract the dissociation constants of nucleic acid-protein interaction.
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spelling pubmed-70957712020-04-03 Detection of Severe Acute Respiratory Syndrome (SARS) Coronavirus Nucleocapsid Protein Using AlGaN/GaN High Electron Mobility Transistors Hsu, You-Ren Lee, Geng-Yen Chyi, Jen-Inn Chang, Chung-ke Huang, Chih-Cheng Hsu, Chen-Pin Huang, Tai-huang Ren, Fan Wang, Yu-Lin ECS Trans Advances in Wide Bandgap Semiconductors AlGaN/GaN high electron mobility transistors (HEMTs) were used to detect the SARS coronavirus (SARS-CoV) nucleocapsid protein interaction without fluorescent labeling. The detection limit in our system was approximately 0.003 nM of protein sample. Our result showed that this technique was more competitive than isotope-labeling EMSA. We demonstrated AlGaN/GaN was highly potential in constructing a semiconductor-based-sensor binding assay to extract the dissociation constants of nucleic acid-protein interaction. The Electrochemical Society, Inc. 2013-03-15 /pmc/articles/PMC7095771/ /pubmed/32288936 http://dx.doi.org/10.1149/05006.0239ecst Text en © 2012 ECS - The Electrochemical Society This article is made available via the PMC Open Access Subset for unrestricted research re-use and analyses in any form or by any means with acknowledgement of the original source.
spellingShingle Advances in Wide Bandgap Semiconductors
Hsu, You-Ren
Lee, Geng-Yen
Chyi, Jen-Inn
Chang, Chung-ke
Huang, Chih-Cheng
Hsu, Chen-Pin
Huang, Tai-huang
Ren, Fan
Wang, Yu-Lin
Detection of Severe Acute Respiratory Syndrome (SARS) Coronavirus Nucleocapsid Protein Using AlGaN/GaN High Electron Mobility Transistors
title Detection of Severe Acute Respiratory Syndrome (SARS) Coronavirus Nucleocapsid Protein Using AlGaN/GaN High Electron Mobility Transistors
title_full Detection of Severe Acute Respiratory Syndrome (SARS) Coronavirus Nucleocapsid Protein Using AlGaN/GaN High Electron Mobility Transistors
title_fullStr Detection of Severe Acute Respiratory Syndrome (SARS) Coronavirus Nucleocapsid Protein Using AlGaN/GaN High Electron Mobility Transistors
title_full_unstemmed Detection of Severe Acute Respiratory Syndrome (SARS) Coronavirus Nucleocapsid Protein Using AlGaN/GaN High Electron Mobility Transistors
title_short Detection of Severe Acute Respiratory Syndrome (SARS) Coronavirus Nucleocapsid Protein Using AlGaN/GaN High Electron Mobility Transistors
title_sort detection of severe acute respiratory syndrome (sars) coronavirus nucleocapsid protein using algan/gan high electron mobility transistors
topic Advances in Wide Bandgap Semiconductors
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7095771/
https://www.ncbi.nlm.nih.gov/pubmed/32288936
http://dx.doi.org/10.1149/05006.0239ecst
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